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THE EFFECT OF LOW TEMPERATURE GaAs NUCLEATION ON THE GROWTH OF GaN ON SILICON (001) DURING MOVPE PROCESS

机译：运动过程中低温GaAs形核对GaN（Si）（001）上GaN生长的影响

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摘要

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 are-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.
机译：使用在低温下生长的GaAs成核层，通过金属有机气相外延（MOVPE）在硅（001）上生长了高质量的立方氮化镓。研究了各种成核条件对GaN外延层质量的影响。我们发现通过原子层外延（ALE）生长的GaAs成核层可以通过抑制混合相的形成来提高GaN膜的质量。使用光致发光（PL）和X射线衍射来表征GaN外延层的特性。通过使用ALE生长的10-20nm GaAs成核层，获得了室温下半峰全宽（FWHM）为130meV和X射线FWHM为70 are-min的高质量GaN外延层。

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  • 来源
    《Nitride semiconductors》|1997年|69-74|共6页
  • 会议地点 Boston MA(US)
  • 作者

    L.X. Zheng; J.W. Liang; H.Yang; J.B. Li; Y.T. Wang; D.P. Xu; X.F. Li; L.H. Duan; X.W. Hu;

  • 作者单位

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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