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THE EFFECT OF HYDROGEN CARRIER GAS ON THE MORPHOLOGICAL EVOLUTION AND MATERIAL PROPERTIES OF GaN ON SAPPHIRE

机译：氢气中载气对蓝宝石上氮化镓的形貌演化和材料性能的影响

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In-situ optical reflectance is used to monitor the morphological evolution of the two-step GaN growth on sapphire. The amount of H_2 carrier gas used in the growth is observed to strongly influence the morphological evolution of the low temperature buffer layer and the subsequent high temperature nucleation behavior, which in turn affects the structural and electrical properties of the GaN epitaxial films. The optical reflectance transients correlate with the sizes and distributions of nuclei as observed by AFM.

机译：原位光反射率用于监测蓝宝石上两步GaN生长的形态演变。观察到生长中使用的H_2载气的量会强烈影响低温缓冲层的形貌演变以及随后的高温成核行为，进而影响GaN外延膜的结构和电性能。如通过AFM观察到的，光反射瞬态与核的大小和分布相关。

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来源
《Nitride semiconductors》|1997年|143-148|共6页
会议地点 Boston MA(US)
作者
T.B. Ng; J. Han; R.M. Biefeld; J.C. Zolper; M.H. Crawford; D.M. Follstaedt;
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作者单位

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

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正文语种 eng
中图分类材料;
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THE EFFECT OF HYDROGEN CARRIER GAS ON THE MORPHOLOGICAL EVOLUTION AND MATERIAL PROPERTIES OF GaN ON SAPPHIRE

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