首页> 外文会议>Nitride semiconductors >NONDESTRUCTIVE, ROOM TEMPERATURE DETERMINATION OF THE NATURE OF THE BAND-BENDING (CARRIER TYPE) IN GROUP Ⅲ NITRIDES USING CONTACTLESS ELECTROREFLECTANCE AND SURFACE PHOTOVOLTAGE SPECTROSCOPY

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NONDESTRUCTIVE, ROOM TEMPERATURE DETERMINATION OF THE NATURE OF THE BAND-BENDING (CARRIER TYPE) IN GROUP Ⅲ NITRIDES USING CONTACTLESS ELECTROREFLECTANCE AND SURFACE PHOTOVOLTAGE SPECTROSCOPY

机译：电导率和表面光致电压光谱法无损测定室温下Ⅲ族氮化物的弯曲性质（载体类型）

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Using contactless electroreflectance and surface photovoltage spectroscopy at room temperature we have nondestructively evaluated the band bending (carrier type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the GaN at the InGaN/GaN interface of samples of epitaxial InGaN grown on top of thick GaN epilayers/sapphire, having average n- and p-type character.

机译：我们在室温下使用非接触电反射和表面光电压光谱法，对外延n型和p型GaN /蓝宝石样品表面以及InGaN表面和InGaN GaN上的能带弯曲（载流子类型）进行了无损评估。在厚GaN外延层/蓝宝石上生长的外延InGaN样品的/ GaN界面，具有平均n型和p型特性。

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来源
《Nitride semiconductors》|1997年|573-578|共6页
会议地点 Boston MA(US)
作者
WOJCIECH KRYSTEK; FRED H. POLLAK; Z.C. FENGq; M. SCHURMAN; R.A. STALL;
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作者单位

Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York Brooklyn, NY 11210;

Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York Brooklyn, NY 11210;

EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873;

EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873;

EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873;

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正文语种 eng
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1. Non-destructive, room temperature characterization of wafer-sized Ⅲ-Ⅴ semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy [J] . Y. S. Huang, F. H. Pollak Physica Status Solidi. A, Applied Research . 2005,第7期

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2. Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy [J] . Choulis S.A., Hosea T.J.C., Ghosh S., IEEE Photonics Technology Letters . 2003,第8期

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3. Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface [J] . Janicki Lukasz, Gladysiewicz Marta, Misiewicz Jan, Applied Surface Science . 2017,第PTa2期

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4. NONDESTRUCTIVE, ROOM TEMPERATURE DETERMINATION OF THE NATURE OF THE BAND-BENDING (CARRIER TYPE) IN GROUP Ⅲ NITRIDES USING CONTACTLESS ELECTROREFLECTANCE AND SURFACE PHOTOVOLTAGE SPECTROSCOPY [C] . Symposium on nitride semiconductors . 1998

机译：非破坏性的，室温测定Ⅲ组氮化物中带弯曲（载体型）的性质，采用非接触式电流和表面光电光谱
5. Gallium nitride growth by RF-plasma assisted molecular bean epitaxy: Determination of surface stoichiometry by RHEED-TRAXS, annealing of gallium nitride:beryllium and the effects of active nitrogen species, surface polarity, and excess gallium-overpressure on high temperature limits. [D] . VanMil, Brenda. 2005

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7. Postgrowth Nondestructive Characterization of Dilute-Nitride VCSELs Using Electroreflectance Spectroscopy [O] . S. A. Choulis, T. J. C. Hosea, S. Ghosh, 2014

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NONDESTRUCTIVE, ROOM TEMPERATURE DETERMINATION OF THE NATURE OF THE BAND-BENDING (CARRIER TYPE) IN GROUP Ⅲ NITRIDES USING CONTACTLESS ELECTROREFLECTANCE AND SURFACE PHOTOVOLTAGE SPECTROSCOPY

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