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首页> 外文会议>Nitride semiconductors >MICROSTRUCTURAL EVALUATION OF ZnO THIN FILMS DEPOSITED BY MOCVD
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MICROSTRUCTURAL EVALUATION OF ZnO THIN FILMS DEPOSITED BY MOCVD

机译：MOCVD沉积ZnO薄膜的微观结构评价。

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摘要

ZnO films are being used in many emerging technologies such as high frequency RF filters, substrate/buffer layer for GaN deposition, and as active layers in blue-UV LEDs and lasers. These applications require epitaxial films with high structural quality. In the present paper, results on the structure of ZnO films deposited by MOCVD on c-plane and r-plane sapphire substrates are presented. These films have been investigated by XRD, SEM and TEM. X-ray phi-scans show that the films have a single epitaxial relationship with each substrate orientation. (11.0) ZnO grows on (01.2) sapphire (r-plane), while (00.1) oriented films grow on (00.1) sapphire (c-plane). Smooth films are obtained on r-sapphire, while films with a columnar morphology are obtained on c-sapphire. Based on the morphology of the columnar grains grown on c-sapphire, it is expected that the films are oxygen terminated. The interface between ZnO and sapphire is atomically sharp as observed by HRTEM. Misfit dislocations at the interface between ZnO and r-sapphire have been observed. Grain boundaries between coalescing islands during film growth are the main type of defects. Under certain conditions, very long whiskers were observed to grow by the VLS mechanism. By modifying our system, we have been able to prevent the growth of these whiskers.
机译：ZnO膜已用于许多新兴技术中，例如高频RF滤波器，用于GaN沉积的衬底/缓冲层，以及用作蓝UV LED和激光器中的有源层。这些应用需要具有高结构质量的外延膜。本文给出了MOCVD在c面和r面蓝宝石衬底上沉积ZnO薄膜结构的结果。这些膜已通过XRD，SEM和TEM进行了研究。 X射线phi扫描表明，薄膜与每种基材取向都具有单一的外延关系。 （11.0）ZnO在（01.2）蓝宝石（r平面）上生长，而（00.1）取向的薄膜在（00.1）蓝宝石（c平面）上生长。在r型蓝宝石上可获得光滑的薄膜，而在c型蓝宝石上可获得具有柱状形态的薄膜。基于在c-蓝宝石上生长的柱状晶粒的形态，可以预期膜是氧封端的。 HRTEM观察到，ZnO和蓝宝石之间的界面原子清晰。在ZnO和r-蓝宝石之间的界面处发现了错配位错。薄膜生长过程中聚结岛之间的晶界是缺陷的主要类型。在某些条件下，观察到非常长的晶须通过VLS机制生长。通过修改我们的系统，我们已经能够防止这些晶须的生长。

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  • 来源
    《Nitride semiconductors》|1997年|131-136|共6页
  • 会议地点 Boston MA(US)
  • 作者

    C.R. Gorla; S. Liang; N. Emanetoglu; W.E. Mayo; Y. Lu;

  • 作者单位

    Dept. of Ceramic and Materials Science, Rutgers University, Piscataway, NJ 08855;

    Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855;

    Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855;

    Dept. of Ceramic and Materials Science, Rutgers University, Piscataway, NJ 08855;

    Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855;

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  • 正文语种 eng
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