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DIRECT OBSERVATIONS OF ATOMIC STRUCTURES OF DEFECTS IN GAN BY HIGH RESOLUTION Z-CONTRAST STEM

机译：高分辨率Z对比杆直接观察GAN中缺陷的原子结构。

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GaN/(0001)Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {10-10} surface. The surfaces of the nanopipe walls are on {10-10} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z-contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.

机译：利用STEM对高分辨率的Z对比成像研究了低压MOVPE生长的GaN /（0001）蓝宝石。首次直接观察具有边缘特征的螺纹位错显示了原子核结构，该结构似乎与{10-10}表面具有相似的构型。纳米管壁的表面在{10-10}上，原子之间的终止层每对一对键。此外，棱柱形堆叠断层的高分辨率Z对比图像证实了常规HRTEM的结果。

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来源
《Nitride semiconductors》|1997年|781-786|共6页
会议地点 Boston MA(US)
作者
Y. Xin; S.J. Pennycook; N.D. Browning; P. D. Nellist; S. Sivananthan; B. Beaumont; J- P Faurie; P. Gibart;
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作者单位

Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA Solid State Division, Oak Ridge National Laboratory, Oak Ridge,TN 37381-6031, USA;

Solid State Division, Oak Ridge National Laboratory, Oak Ridge,TN 37381-6031, USA;

Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA;

Cavendish Laboratory, Cambridge University ,Madingley Road .Cambridge CB3 0HE,UK;

Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA;

CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France;

Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France;

CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France;

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正文语种 eng
中图分类材料;
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机译：通过高分辨率Z对比sTEm直接观察GaN中缺陷的原子结构

DIRECT OBSERVATIONS OF ATOMIC STRUCTURES OF DEFECTS IN GAN BY HIGH RESOLUTION Z-CONTRAST STEM

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