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首页> 外文会议>Nitride semiconductors >NITRIDATION OF SAPPHIRE SUBSTRATE USING REMOTE PLASMA ENHANCED-ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE
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NITRIDATION OF SAPPHIRE SUBSTRATE USING REMOTE PLASMA ENHANCED-ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

机译：低温等离子增强超高真空化学气相沉积法对蓝宝石基质的氮化

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摘要

A remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system equipped with a radio frequency-inductively coupled plasma (RF-ICP) which produces the reactive nitrogen species was employed to study the nitridation process at low temperature. The sapphire surface nitridated under various conditions was investigated with x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The nitridation process seems to be mostly affected by the RF power even at low temperature since the intensity of the N_(1s) peak was not dependent on the substrate temperature but on the RF power. The AFM images showed that the protrusion density on the sapphire surface decreased rapidly when the nitridation temperature was decreased. This result suggests that the formation of the protrusions is closely related to the process temperature, indicating that the formation of such protrusions is caused by the change of an elastic strain energy due to the thermal stress. It was possible to nitridate the sapphire surface without protrusion at a very low temperature. The crystallinity of GaN grown at 450 ℃ was found to be much improved when the sapphire substrate was nitridated at low temperature prior to the GaN layer growth.
机译：远程等离子体增强超高真空化学气相沉积（RPE-UHVCVD）系统配备了射频感应耦合等离子体（RF-ICP），可产生活性氮物质，用于研究低温下的氮化过程。使用X射线光电子能谱（XPS）和原子力显微镜（AFM）研究了在各种条件下氮化的蓝宝石表面。即使N_（1s）峰的强度与衬底温度无关，但与RF功率有关，即使在低温下，氮化过程似乎也受RF功率影响最大。原子力显微镜图像表明，当氮化温度降低时，蓝宝石表面的突出密度迅速降低。该结果表明，突起的形成与工艺温度密切相关，表明这种突起的形成是由于热应力引起的弹性应变能的变化引起的。可以在非常低的温度下氮化蓝宝石表面而不会突出。发现在GaN层生长之前将蓝宝石衬底在低温下氮化时，在450℃下生长的GaN的结晶度有了很大的提高。

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  • 来源
    《Nitride semiconductors》|1997年|81-86|共6页
  • 会议地点 Boston MA(US)
  • 作者

    JONG-SIK PAEK; KYOUNG-KOOK KIM; JI-MYON LEE; DONG-JUN KIM; HYO-GUN KIM; SEONG-JU PARK;

  • 作者单位

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

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  • 正文语种 eng
  • 中图分类 材料;
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