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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Influence of Substrate Temperature During Sputter Deposition on the Subsequent Formation of Titanium Disilicide
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Influence of Substrate Temperature During Sputter Deposition on the Subsequent Formation of Titanium Disilicide

机译：溅射沉积过程中衬底温度对随后形成的二硅化钛的影响

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We examine how the substrate temperature during Ti film sputter deposition influences the subsequent texture formation in TiSi_2 thin films. Titanium films of 32 nm thickness were sputtered onto Si(001) at elevated substrate temperatures varying between 100 ℃ and 900 ℃. After the depositions, in situ x-ray diffraction (XRD) measurements were performed to study the thin film reactions in real time, as the samples were annealed. The XRD results show that the substrate temperature significantly influences the texture of the initial Ti film as well as the texture of the resulting C54-phase TiSi_2. The preferred Ti orientation gradually changes from (002) to (101) fiber texture as the deposition temperature increases up to 500 ℃. Films deposited at 600 ℃ transformed into the C49 phase during deposition while films deposited at 700 ℃ and higher temperatures transformed into the C54 phase during deposition. The series of deposited films was annealed up to 1000 ℃ in He to complete the C54 phase formation while monitoring the texture evolution in situ using a position sensitive x-ray detector. The XRD results show that the final C54 phase texture changes from a dominant (311) orientation normal to the substrate to a (010) orientation for substrate temperatures between 600 ℃ and 700 ℃. The C49-C54 phase transformation temperature is also lowered for these deposition temperatures. Ex situ pole figure analysis of the film deposited at 700 ℃ confirms the dominant C54 (010) texture and shows an in-plane orientation with C54 [001] ‖ Si [ 110]. For substrate temperatures between 800 ℃ and 900 ℃, the C54 texture changes dramatically. In this case, θ-2θ scans do not show a preferred C54 orientation, but pole figure analysis indicates weak in-plane orientations.
机译：我们研究了Ti膜溅射沉积过程中的衬底温度如何影响TiSi_2薄膜中的后续纹理形成。在100至900℃之间升高的衬底温度下，将32 nm厚的钛膜溅射到Si（001）上。沉积后，进行原位X射线衍射（XRD）测量以实时研究薄膜退火过程中的薄膜反应。 XRD结果表明，衬底温度显着影响初始Ti膜的织构以及所得C54相TiSi_2的织构。随着沉积温度升高到500℃，Ti的优选取向从（002）到（101）逐渐变化。 600℃下沉积的薄膜在沉积过程中转变为C49相，而700℃及更高温度下沉积的膜在沉积过程中转变为C54相。该系列沉积膜在He中退火至1000℃以完成C54相的形成，同时使用位置敏感的X射线检测器监测原位结构的演变。 X射线衍射结果表明，最终的C54相织构从600℃至700℃的基底温度从垂直于基底的主要（311）取向变为（010）取向。对于这些沉积温度，C49-C54相变温度也降低了。在700℃沉积的膜的异位极图分析证实了主要的C54（010）织构，并显示了C54 [001]‖Si [110]的面内取向。对于800℃至900℃的基材温度，C54的质构会发生巨大变化。在这种情况下，θ-2θ扫描未显示出首选的C54方向，但是极图分析表明其平面内方向较弱。

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