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ALD HfO_2 surface preparation study

机译：ALD HfO_2表面制备研究

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摘要

A fast screening technique is used to study the ALD HfO_2 growth behavior on different types of starting surfaces (H-passivated, chemical oxide, thermal oxide). The amount of Hf deposited at the early stages of the ALD process is measured by means of RBS. The HfO_2 film quality on different starting surfaces is examined with ToFSIMS. The results suggest an island growth mechanism on a H-terminated starting surface: nucleation, development of separated nuclei and flattening. It is shown that ALD growth starts faster if―OH groups are present on the surface. A remote H_2 plasma surface pre-treatment at room temperature is also studied. The influence of the plasma exposure time and number of water pulses prior to HfO_2 deposition was examined. The H_2 plasma surface pre-treatment can be considered as a promising candidate for sub 1 nm EOT performance.
机译：快速筛选技术用于研究ALD HfO_2在不同类型的起始表面（H钝化，化学氧化物，热氧化物）上的生长行为。在ALD过程的早期沉积的Hf量通过RBS测量。用ToFSIMS检查不同起始表面上的HfO_2膜质量。结果表明在H终止的起始表面上有一个岛状生长机制：成核，分离核的发展和变平。结果表明，如果在表面存在OH基，则ALD的生长开始较快。还研究了室温下远程H_2等离子体表面预处理。检查了等离子体暴露时间和HfO_2沉积之前水脉冲数的影响。 H_2等离子体表面预处理可以被视为亚1 nm EOT性能的有前途的候选者。

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