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Study of interface formation of (Ba,Sr)TiO_3 thin films grown by rf sputter deposition on bare Si and thermal SiO_2/Si substrates

机译:射频溅射沉积在裸Si和热SiO_2 / Si衬底上生长的(Ba,Sr)TiO_3薄膜的界面形成研究

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(Ba,Sr)TiO_3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO_2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO_2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO_2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density D_(it) of an order of magnitude was observed for oxidized Si substrates.
机译:通过离子束溅射在裸硅和氧化硅上沉积(Ba,Sr)TiO_3(BST)薄膜。椭圆偏振光谱法(SE)模型的结果表明,裸露的衬底和具有1 nm初始氧化物层的衬底的SiO_2层厚度增加,而较厚的(3.5 nm)初始SiO_2膜的SiO_2层厚度减小。该结果通过薄膜的高分辨率电子显微镜(HREM)分析得到证实,并且据信这是由于Si同时皮下氧化和BST层与SiO 2的反应。根据高频电容-电压(C-V)分析,对于氧化的Si衬底,观察到界面陷阱密度D_(it)下降了一个数量级。

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