MOCVD of HfO_2 from Alkoxide and Alkylamide Precursors

机译：烷氧化物和烷基酰胺前体的HfO_2的MOCVD

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The alkoxide and alkylamide complexes [Hf(mmp)_4] and [Hf(NMe_2)_4]_2 are both promising precursors for the MOCVD of HfO_2. A comparison has shown that [Hf(NMe_2)_4]_2 deposits oxide at lower temperatures and over a wider temperature range then [Hf(mmp)_4].

机译：醇盐和烷基酰胺配合物[Hf（mmp）_4]和[Hf（NMe_2）_4] _2都是用于HfO_2 MOCVD的有希望的前体。比较表明，[Hf（NMe_2）_4] _2比[Hf（mmp）_4]在更低的温度和更大的温度范围内沉积氧化物。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.173-178|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
John L. Roberts; Paul A. Williams; Anthony C. Jones; Paul Marshall; Paul R. Chalker; Jamie F. Bickley; Hywel O. Davies; Lesley M. Smith;
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作者单位

Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MOCVD of HfO_2 from Alkoxide and Alkylamide Precursors

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