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Physical and Electrical Characterization of Hafnium Silicate Thin Films

机译：硅酸Ha薄膜的物理和电学表征

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摘要

Evaluation of physically thicker gate insulator materials with significantly higher dielectric constants (k = 10 - 25) as potential replacements for silicon dioxide, SiO_2 (k = 3.9), and silicon oxynitride continues to be a focus of the semiconductor industry. The challenge is to provide a film with lower leakage current and with capacitance equivalent to < 1.0 nm SiO_2. One such candidate material; metal-organic chemical vapor deposited (MOCVD) hafnium silicate, has been physically characterized by high resolution transmission electron microscopy (HRTEM) in plan view, as a blanket, uncapped film and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) in cross section following integration into capacitors and complementary metal oxide semiconductor (CMOS) transistors. Changes in the material microstructure associated with phase segregation and crystallization as a function of Hf silicate composition and rapid thermal anneal (RTA) temperature have been observed and a discussion of the segregation mechanisms is presented. Also, various methods of incorporating nitrogen into bulk hafnium silicate films have been investigated and resultant transistor electrical performance data has been correlated with physical characterization for NH_3 post deposition anneal (PDA) treatments at various temperatures.
机译：具有较高介电常数（k = 10-25）的物理上较厚的栅极绝缘体材料的评估作为二氧化硅，SiO_2（k = 3.9）和氧氮化硅的潜在替代品仍然是半导体行业的重点。面临的挑战是提供一种具有较低泄漏电流和等效电容小于1.0 nm SiO_2的薄膜。一种这样的候选材料；金属有机化学气相沉积（MOCVD）硅酸ha在物理上已通过高分辨率透射电子显微镜（HRTEM）进行了物理表征，如橡皮布，无盖膜和高角度环形暗场扫描透射电子显微镜（HAADF-STEM）集成到电容器和互补金属氧化物半导体（CMOS）晶体管中后的截面图。已经观察到与相偏析和结晶相关的材料微观结构随Hf硅酸盐组成和快速热退火（RTA）温度的变化，并讨论了偏析机理。而且，已经研究了将氮掺入块状硅酸ha薄膜中的各种方法，并且所得的晶体管电性能数据已与在各种温度下进行NH_3沉积后退火（PDA）处理的物理特性相关。

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