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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Physical-Chemical Evolution upon Thermal Treatments of Al_2O_3, HfO_2 and Al/Hf Composite Materials Deposited by ALC YD~(TM)
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Physical-Chemical Evolution upon Thermal Treatments of Al_2O_3, HfO_2 and Al/Hf Composite Materials Deposited by ALC YD~(TM)

机译：ALC YD〜（TM）沉积Al_2O_3，HfO_2和Al / Hf复合材料热处理后的物理化学演变

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摘要

This paper presents a systematic investigation of thermal stability of high-k materials deposited on RCA cleaned wafers by ALCVD~(TM) in an ASM Pulsar~(TM) 2000 reactor. Physical-chemical evolution of Al_2O_3, HfO_2 and Al/Hf composite materials (nanolaminate and aluminates) was studied considering two types of thermal treatments: quenched vacuum anneals from 300℃ to 900℃ and furnace atmospheric processes in N_2 or O_2 at 850℃ and 900℃. Material crystallization and changes in film structure were studied by means of TEM, XRD, XRR, XRF, RBS and TOF-SIMS. Non-contact electrical measurements were used to detect modification in EOT and fixed charge. Al_2O_3 was found still amorphous at 900℃. Not so for HfO_2 that crystallized in monoclinic phase at a temperature between 300-400℃. Crystallization temperature and possible phase separation of Al/Hf composite materials were found to be a function of Al_2O_3 content and film type. In most of these samples, however, a chemical evolution was detected in addition to the above reported crystallization phenomena All the achieved results demonstrate that depending on thermal treatment conditions, ALCVD_(TM) high-k stability does not only concern phase transition effects but also a transformation of the "SiO_2/high-k" system into "doped-SiO_2/silicate" stack.
机译：本文介绍了在ASM Pulsar〜TM 2000反应器中通过ALCVD〜TM沉积在RCA清洁晶圆上的高k材料的热稳定性的系统研究。研究了两种热处理类型：Al_2O_3，HfO_2和Al / Hf复合材料（纳米铝酸盐和铝酸盐）的物理化学演变：300℃至900℃的淬火真空退火以及850℃和900°C的N_2或O_2的炉内大气过程。 ℃。通过TEM，XRD，XRR，XRF，RBS和TOF-SIMS研究了材料的结晶和膜结构的变化。使用非接触式电测量来检测EOT和固定电荷的变化。发现Al_2O_3在900℃仍为非晶态。对于在300-400℃之间的单斜晶相结晶的HfO_2并非如此。发现Al / Hf复合材料的结晶温度和可能的相分离是Al_2O_3含量和膜类型的函数。然而，在大多数这些样品中，除上述报道的结晶现象外，还检测到化学演化。所有获得的结果表明，根据热处理条件，ALCVD_（TM）高k稳定性不仅涉及相变效应，而且还涉及将“ SiO_2 / high-k”体系转变为“掺杂的SiO_2 /硅酸盐”叠层。

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