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首页> 外文会议>Optical Microlithography XI >ArF excimer laser lithography with bottom antireflective coating
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ArF excimer laser lithography with bottom antireflective coating

机译：带底部抗反射涂层的ArF准分子激光光刻

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摘要

Abstract: In ArF excimer laser lithography, the bottom antireflective coating (BARC) technique is essential in inhibiting the effect of interference and reflective notching. We investigated the antireflective effect of commercially available organic BARCs, that had originally been designed for KrF and i-line lithography, and also the patterning characteristics of ArF resists with BARCs. The refractive indices of various materials were measured with a spectroscopic ellipsometer. The real part (n) and the imaginary part (k) of the complex refractive index at 193 nm were 1.4 to 1.7 and 0.1 to 0.8 respectively. Almost all the materials had sufficient antireflectivity at 193 nm. We investigated the patterning characteristics of chemically amplified ArF positive resists with suitable BARC materials. The resolution, the depth-of- focus of patterns below 0.16-micrometer lines and spaces, and the exposure latitude were improved and good critical dimensional control over topography was achieved by using BARC. An acceptable profile after gate structure (BARC, W-Si, and Poly-Si) etching could be obtained under the typical etching conditions used for KrF resists. !12
机译：摘要：在ArF准分子激光光刻中，底部抗反射涂层（BARC）技术对于抑制干涉和反射刻痕的影响至关重要。我们研究了最初用于KrF和i-line光刻设计的市售有机BARC的抗反射效果，以及带有BARC的ArF抗蚀剂的图案化特性。各种材料的折射率用光谱椭圆仪测量。 193nm处的复数折射率的实部（n）和虚部（k）分别为1.4至1.7和0.1至0.8。几乎所有材料在193 nm处都具有足够的抗反射性。我们研究了使用合适的BARC材料对化学放大的ArF正性抗蚀剂的图案化特性。通过使用BARC，分辨率，低于0.16微米的线和间距的图案的景深以及曝光范围得到改善，并且可以很好地控制地形的关键尺寸。在用于KrF抗蚀剂的典型蚀刻条件下，可以得到栅极结构（BARC，W-Si和Poly-Si）蚀刻后可接受的轮廓。 ！12

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