首页> 外文会议>Optical Microlithography XI >Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask
【24h】

Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask

机译:使用多相移掩模的Gb DRAM窄间距接触阵列构图技术

获取原文
获取原文并翻译 | 示例

摘要

Abstract: Application of a multi-phase-shifting mask to hole arrays for giga-bit DRAM has been studied. Self-aligned contact plugs for a cell pitch of 0.38 micrometer under the bit-line contacts and the storage-node contacts have been formed at the same time by using a multi-phase-shifting mask with two different phase-shifters. Sufficient depth of focus (DOF) of 0.8 micrometer has been obtained. Furthermore, hole-shape distortion caused by focus offset can be suppressed under the off-axis illumination condition with a quadrupole aperture !19
机译:摘要:研究了一种多相移掩模在千兆位DRAM的孔阵列中的应用。通过使用带有两个不同移相器的多相移掩膜,可以同时形成位线触点和存储节点触点下方的单元间距为0.38微米的自对准接触塞。已经获得了0.8微米的足够的焦深(DOF)。此外,在具有四极孔径!19的离轴照明条件下,可以抑制由焦点偏移引起的孔形畸变。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号