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DUV stability of carbon films for attenuated phase-shift mask a

机译：衰减相移掩模a的碳膜的DUV稳定性

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Abstract: The UV stability of a-C:H films was investigated by irradiating them with a 248 nm excimer laser or a DUV lamp with a 248 nm filter. Both transmittance and phase angle of the film at 248 nm were measured at different UV dose intervals up to a cumulative dose of 10,000 J/cm$+2$/. We found that film stability was dependent on processing conditions. Excellent stability was achieved when the a-C:H films were sputtered from a graphite target in a Ar/hydrocarbon process gas mixture with the substrate held at an rf bias. If no substrate bias was used, films were stable only up to a maximum of 1,000 J/cm$+2$/ for a nominal transmittance of about 6%. These instabilities were attributed to adsorption of oxygen on the film and its subsequent diffusion into the films. X-ray photoelectron spectroscopy (XPS) shows that under DUV irradiation the oxygen content increases from 13 to 29 at.% on the carbon surface. Secondary ion mass spectrometry (SIMS) shows also oxygen diffusion into the carbon film. It appears that the oxygen first removes the graphitic content since film transmittance was found to increase. It is believed that rf bias sputtering results in denser films that are more impervious to oxygen penetration and hence more durable to this UV assisted oxidative degradation process. The sputtered films with no substrate bias were found stable when irradiated in a nitrogen atmosphere. !7
机译：摘要：用248 nm准分子激光或带有248 nm滤光片的DUV灯照射a-C：H薄膜，研究其紫外线稳定性。在不同的紫外线剂量间隔下测量薄膜在248 nm处的透射率和相角，直至累积剂量为10,000 J / cm $ + 2 $ /。我们发现膜的稳定性取决于加工条件。当在Ar /烃工艺气体混合物中从石墨靶溅射a-C：H膜时，基板保持在rf偏压下，可获得极好的稳定性。如果不使用衬底偏压，则膜仅在最大约1,000J / cm +2 +的情况下稳定，标称透射率为约6％。这些不稳定性归因于氧气在薄膜上的吸附及其随后扩散到薄膜中。 X射线光电子能谱（XPS）表明，在DUV照射下，碳表面上的氧含量从13原子％增加到29原子％。二次离子质谱（SIMS）也显示出氧扩散到碳膜中。由于发现膜的透射率增加，因此似乎氧气首先除去了石墨含量。据信，射频偏压溅射导致更致密的膜，该膜更不透氧，因此对于这种紫外线辅助的氧化降解过程更耐久。当在氮气气氛中照射时，发现没有基材偏压的溅射膜是稳定的。 ！7

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