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>Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask
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Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask
Abstract: The resist dimples caused by the sidelobe effect are the unexpected by-products at printing 0.2-micrometer dense contact holes with attenuated phase-shift mask (PSM) and KrF laser stepper. We found that not only the printing bias and duty ratio but also the film thickness of the resist and the oxide layer underneath the resist affect the generation of the dimples. The 0.2-micrometer contact holes on 0.52-micrometer pitch were printed successfully without resist dimples by controlling the mentioned factors. Furthermore, the depth margin of the dimples was accessed in real etching process. The residual resist at dimples was 3150 Angstrom at least after development in order to against the etching process. !2
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