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首页> 外文会议>Optical Microlithography XIX pt.1 >Across Wafer Focus Mapping and Its Applications in Advanced Technology Nodes
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Across Wafer Focus Mapping and Its Applications in Advanced Technology Nodes

机译：跨晶圆聚焦映射及其在先进技术节点中的应用

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The understanding of focus variation across a wafer is crucial to CD control (both ACLV and AWLV) and pattern fidelity on the wafer and chip levels. This is particularly true for the 65nm node and beyond, where focus margin is shrinking with the design rules, and is turning out to be one of the key process variables that directly impact the device yield. A technique based on the Phase-Shift Focus Monitor (PSFM) is developed to measure realistic across-wafer focus errors on materials processed in actual production flows. With this technique, we are able to extract detailed across-wafer focus performance at critical pattern levels from the front end of line (FEOL) all the way through the back end of line (BEOL). Typically, more than 8,000 data points are measured across a wafer, and the data are decomposed into an intra-field focus map, which captures the across chip focus variation (ACFV), and an inter-field focus map, which describes the across wafer focus variation (AWFV). ACFV and AWFV are then analyzed to understand various components in the overall focus error, including; across slit lens image field, reticle shape and dynamic scan components, local wafer flatness, wafer processing effect, pattern density, and edge die abnormality. The intra-field ACFV lens component is compared with TI's ScatterLith and ASML's FOCAL techniques. Results are consistent with the predictions based on the on-board lens aberration data. Inter-field AWFV is the most interesting, due to lack of detailed understanding of the process impact on scanner focus and leveling. PSFM data is used to characterize the effect of wafer processing such as etch, deposition, and CMP on across wafer focus control. Comparison and correlation of PSFM focus mapping with the wafer height and residual moving average (MA) maps generated by the scanner's optical leveling sensors shows a good match in general. Process induced focus errors are clearly observed on wafers of significant film stack variation and/or pattern density variation. Implications on total focus control and depth of focus (DOF) requirements for 65nm mass production are discussed in this paper using a quantitative pattern yield model. The same technique can be extended to immersion lithography.
机译：了解整个晶圆上的焦点变化对于CD控制（ACLV和AWLV两者）以及晶圆和芯片级的图案保真度至关重要。对于65nm节点及以后的节点尤其如此，因为其焦点裕度会随着设计规则而缩小，并且已成为直接影响器件良率的关键工艺变量之一。开发了一种基于相移聚焦监控器（PSFM）的技术，用于测量实际生产流程中加工的材料的实际跨晶圆聚焦误差。借助这项技术，我们能够从线路的前端（FEOL）一直到线路的后端（BEOL）提取关键图形级别的整个晶圆聚焦性能。通常，在整个晶圆上测量超过8,000个数据点，并将数据分解为场内聚焦图和场间聚焦图，场内聚焦图捕获跨芯片聚焦变化（ACFV），场间聚焦图描述跨晶圆焦点变化（AWFV）。然后对ACFV和AWFV进行分析，以了解总体聚焦误差中的各个组成部分，包括：狭缝透镜的像场，标线片形状和动态扫描分量，局部晶片平坦度，晶片加工效果，图案密度和边缘晶粒异常。将场内ACFV透镜组件与TI的ScatterLith和ASML的FOCAL技术进行了比较。结果与基于车载镜头像差数据的预测一致。由于缺乏对过程对扫描仪聚焦和整平影响的详细了解，因此场间AWFV最为有趣。 PSFM数据用于表征跨晶圆聚焦控制的晶圆处理（例如蚀刻，沉积和CMP）的效果。 PSFM聚焦图与由扫描仪的光学水准仪传感器生成的晶片高度和剩余移动平均（MA）图的比较和相关性通常显示出很好的匹配。在明显的膜堆叠变化和/或图案密度变化的晶片上清楚地观察到工艺引起的聚焦误差。本文使用定量图案产量模型讨论了对65nm批量生产的总聚焦控制和聚焦深度（DOF）要求的含义。相同的技术可以扩展到浸没式光刻。

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