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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIII pt.2 >Fine pixel SEM image for mask pattern quality assurance based on lithography simulation
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Fine pixel SEM image for mask pattern quality assurance based on lithography simulation

机译：基于光刻仿真的用于掩模图案质量保证的精细像素SEM图像

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Optical proximity correction (OPC) is an essential technology for critical dimension (CD) control in Low-k1 lithography. As technology node becomes tighter, more aggressive OPC is required. However, the number of so-called HOT-SPOTs is increasing dramatically. To apply OPC correctly and efficiently, we should consider the total optimization of the process in close connection with data processing, reticle and wafer fabrication process. Conventional one-dimensional CD measurement is no longer suitable for complicated two-dimensional (2D) patterns generated by OPC (e.g. JOG and SERIF). For quality assurance of mask pattern, a metrology of complicated 2D OPC patterns has been required. In our previous report, we proposed a lithography simulation based on edge extraction from a fine pixel SEM image of an actual photomask. This method is very effective for evaluating quality of 2D OPC mask patterns. Employing the method, we developed a system for guaranteeing 2D OPC patterns before shipping the mask to a wafer factory (Fig. 1). In PMJ2005, we presented some specifications required for an SEM, which was one of the key factors of this method. We estimated how factors such as field of image, image resolution, positioning error, and image magnification affect lithography simulation based on fine pixel SEM image. For mask pattern quality assurance of hp65, we found that the field of image of larger than 16um square, the pixel size of less than 3nm, the positioning error of within +/-1um and the magnification error of less than 0.3% were acceptable (Table 1). Under these conditions, wafer image can be predicted with sufficient accuracy by the simulation. And then, in BACUS2005, we reported on a new SEM that was able to satisfy these specifications. In this paper, we report some evaluation results of distortion caused by not only magnification error but also rotation and position error using actual fine pixel SEM image. We will also present our evaluation results of the errors in various pattern conditions such as Dark Field/Bright Field, Pattern density.
机译：光学邻近校正（OPC）是低k1光刻中关键尺寸（CD）控制的一项必不可少的技术。随着技术节点变得越来越紧密，需要更加积极的OPC。然而，所谓的HOT-SPOT的数量正在急剧增加。为了正确，有效地应用OPC，我们应该考虑与数据处理，掩模版和晶圆制造工艺密切相关的工艺的整体优化。常规的一维CD测量不再适用于由OPC（例如JOG和SERIF）生成的复杂二维（2D）模式。为了保证掩模图案的质量，需要复杂的2D OPC图案的度量衡。在我们以前的报告中，我们提出了一种基于从实际光掩模的精细像素SEM图像中进行边缘提取的光刻模拟。该方法对于评估2D OPC掩模图案的质量非常有效。使用该方法，我们开发了一种用于在将掩模运送到晶圆厂之前确保2D OPC图案的系统（图1）。在PMJ2005中，我们介绍了SEM所需的一些规格，这是此方法的关键因素之一。我们估计了像场，图像分辨率，定位误差和图像放大率等因素如何影响基于精细像素SEM图像的光刻模拟。为了确保hp65的掩模图案质量，我们发现大于16um的正方形图像区域，小于3nm的像素大小，+ /-1um以内的定位误差以及小于0.3％的放大倍数是可接受的（表格1）。在这些条件下，可以通过仿真以足够的精度预测晶片图像。然后，在BACUS2005中，我们报告了一种能够满足这些规格的新型SEM。在本文中，我们报告了一些评估结果，这些结果不仅是使用实际的精细像素SEM图像引起的，由倍率误差引起的，而且由旋转误差和位置误差引起的。我们还将介绍我们在各种图案条件下（例如暗场/亮场，图案密度）的误差的评估结果。

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