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Study of the Structural and Thermal Properties of Single Crystalline Epitaxial Rare-Earth-Metal Oxide Layers Grown on Si(111)

机译:Si(111)上生长的单晶外延稀土金属氧化物层的结构和热性能的研究

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摘要

Stress due to crystal lattice mismatch of rare-earth-metal oxide layer epitaxial grown by molecular beam epitaxy on Si(111) substrates and thermal expansion induced stress in the system were studied. X-ray diffraction measurements of the layers were performed during heating up to 1000℃. The layers are almost fully relaxed at room temperature. Only minor tetragonal distortion of the crystal lattice was detected. No thermal stress relaxation was indicated by x-ray diffraction in the oxide layer during the heating and cooling procedure. The time-domain thermo-refiectance technique was used for measurement of the thermal conductivity of the oxide layers. Thermal conductivity of the rare earth oxides is approximately five times higher than that of silicon dioxide.
机译:研究了分子束外延在Si(111)衬底上外延生长的稀土金属氧化物层的晶格失配引起的应力和系统中的热膨胀诱导应力。在加热到1000℃的过程中进行各层的X射线衍射测量。室温下各层几乎完全松弛。仅检测到较小的四方晶格畸变。在加热和冷却过程中,氧化物层中的X射线衍射未显示出热应力松弛。时域热反射技术用于测量氧化物层的热导率。稀土氧化物的导热率大约是二氧化硅的导热率的五倍。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

    Translucent Inc., 952 Commercial St., Palo Alto, CA94303, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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