Evaluation of Properties of SiO_2 Films Fabricated by Plasma Oxidation

著录项

• 来源
  《Physics and technology of high-k materials 9》|2011年|p.169-175|共7页
• 会议地点 Boston MA(US);Boston MA(US)
• 作者

  T. Yamaguchi; K. Nagata; A. Ogura; T. Koganezawa; I. Hirosawa; Y.Kabe; Y. Sato; S. Ishizuka; Y. Hirota;

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• 作者单位

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan, 1-1 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8301, Japan;

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

  JASRI,1-1-1 Kouto, Sayou-cho, Sayou, Hyogo 679-5198, Japan;

  JASRI,1-1-1 Kouto, Sayou-cho, Sayou, Hyogo 679-5198, Japan;

  Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

  Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

  Tokyo Electron Yamanashi, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

  Tokyo Electron, Ltd.,650 Mitsusawa, Hosaka-cho, Nirasaki city, Yamanashi 407-0192, Japan;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 半导体技术;
• 关键词