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Gate Stack Technologies for SiC Power MOSFETs

机译：SiC功率MOSFET的栅极堆叠技术

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摘要

Silicon carbide has gained considerable attention for future power electronics. However, it's well known that SiC-based MOS devices have suffered from degraded electrical properties of thermally grown SKVSiC interfaces, such as low inversion carrier mobility and deteriorated gate oxide reliability. This paper overviews the fundamental aspects of SiC-MOS devices and indicates intrinsic obstacles connected with an accumulation of both negative fixed charges and interface defects and with a small conduction band offset of the SiO_2/SiC interface which leading to the increased gate leakage current of MOS devices. To overcome these problems, we proposed using aluminum oxynitride (AlON) insulators stacked on thin SiO_2 underlayers for SiC-MOS devices. Superior flatband voltage stability of AlON/SiO_2/SiC gate stacks was achieved by optimizing the thickness of the underlayer and nitrogen concentration in the high-k dielectrics. Moreover, we demonstrated reduced gate leakage current and improved current drivability of SiC-MOSFETs with AlON/SiO_2 gate stacks.
机译：碳化硅已成为未来电力电子学的重要关注点。但是，众所周知，基于SiC的MOS器件受热生长的SKVSiC界面电性能下降的困扰，例如低的反向载流子迁移率和恶化的栅极氧化物可靠性。本文概述了SiC-MOS器件的基本方面，并指出了与负固定电荷和界面缺陷的积累以及SiO_2 / SiC界面的导带偏移较小有关的固有障碍，这导致MOS的栅极泄漏电流增加设备。为了克服这些问题，我们提出了使用堆叠在SiC-MOS器件的薄SiO_2底层上的氧氮化铝（AlON）绝缘子。通过优化底层厚度和高k电介质中的氮浓度，可以实现AlON / SiO_2 / SiC栅堆叠的出色的平带电压稳定性。此外，我们证明了具有AlON / SiO_2栅叠层的SiC-MOSFET的栅极漏电流降低，电流驱动性提高。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    H. Watanabe; T. Hosoi; T. Kirino; Y. Uenishi; A. Chanthaphan; D. Ikeguchi; A. Yoshigoe; Y. Teraoka; S. Mitani; Y. Nakano; T. Nakamura; T. Shimura;

  • 作者单位

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan;

    Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan;

    ROHM CO., LTD., Ukyo-ku, Kyoto 615-8585, Japan;

    ROHM CO., LTD., Ukyo-ku, Kyoto 615-8585, Japan;

    ROHM CO., LTD., Ukyo-ku, Kyoto 615-8585, Japan;

    Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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