Theoretical Analysis of a Pseudo-Floating Gate flash EEPROM Device

机译：伪浮栅闪存EEPROM器件的理论分析

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper the program, erase and operations of a novel non-volatile memory transistor are investigated using numerical device simulation. The physical mechanisms that enable this device to operate as a non-volatile memory are analysed. This approach is demonstrated to be a promising concept, suitable for low power CMOS embedded memory.

机译：在本文中，使用数值器件仿真研究了新型非易失性存储晶体管的编程，擦除和操作。分析了使该设备能够用作非易失性存储器的物理机制。事实证明，这种方法是一个有前途的概念，适用于低功耗CMOS嵌入式存储器。

著录项

来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.320-323|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
A.Concnanon; A.Mathewson; C.Papadas; B.Guillaumot; C.Kelaidis;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Stacked gate mid-channel injection flash EEPROM cell. I. Programming speed and efficiency versus device structure [J] . Kim D.M., Cho M.K. IEEE Transactions on Electron Devices . 1998,第8期

机译：叠栅中通道注入闪存EEPROM单元。一，编程速度和效率与器件结构的关系
2. A novel pseudo-floating-gate flash EEPROM device (/spl Psi/-cell) [J] . Papadas C., Guillaumot B. IEEE Electron Device Letters . 1997,第7期

机译：一种新颖的伪浮栅闪存EEPROM器件（/ spl Psi / -cell）
3. Stacked gate mid-channel injection flash EEPROM cell-Part II: analysis of gate current and modeling of programming characteristics [J] . Kim D.M., Cho M.K. IEEE Transactions on Electron Devices . 1998,第8期

机译：堆叠式栅极中沟道注入闪存EEPROM单元-第二部分：栅极电流分析和编程特性建模
4. Theoretical Analysis of a Pseudo-Floating Gate flash EEPROM Device [C] . A.Concnanon, A.Mathewson, C.Papadas, European solid-state device research conference . 1997

机译：伪浮栅闪光EEPROM装置的理论分析
5. Degradation of the tunnel gate oxide in a flash EEPROM device under high-field stress. [D] . Park, Young-Bog. 1997

机译：高场应力下闪存EEPROM器件中隧道栅氧化物的降解。
6. Novel Conjugated Side Chain Fluorinated Polymers Based on Fluorene for Light‐Emitting and Ternary Flash Memory Devices [O] . Qian Zhang, Dongge Ma, Dianzhong Wen, 2019

机译：基于芴的新型共轭侧链含氟聚合物用于发光和三元闪存器件
7. Using soft secondary electron programming to reduce drain disturb in floating-gate nor flash EEPROMs [O] . MAHAPATRA S, BHARATH KUMAR P, NAIR DR 2006

机译：使用软二次电子编程来减少浮栅或闪存EEPROM中的漏极干扰
8. In the Matter of Certain EPROM, EEPROM, Flash Memory, and Flash Microcontroller211 Semiconductor Devices, and Products Containing Same. Investigation No. 337-TA-395 [R] . 1998

机译：在某些EpROm，EEpROm，闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395

Theoretical Analysis of a Pseudo-Floating Gate flash EEPROM Device

摘要

著录项

相似文献

相关主题

期刊订阅