Preparation and Property of Textured and Epitaxial PZT Films on Different Substrates

机译：不同基底上的织构和外延PZT薄膜的制备及性能

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Textured and epitaxial Pb(ZrxTi1-x)O3 (PZT) films with Zr/Ti ratio of 53/47 were deposited on different substrates by sol-gel method.It was found that PZT films deposited on Pt(111)/Ti/SiO2/Si(100)substrates using an oxide seeding layer (lead oxide or titanium dioxide) resulted in highly textured orientations,while epitaxial PZT films were obtained on differently-oriented Nb-doped SrTiO3 (Nb:STO)single-crystal wafers.The difference of orientation and phase structure for textured and epitaxial PZT films were discussed,and the relationships for ferroelectric and piezoeletric properties with preferential orientations were evaluated.Higher remanent polarization and piezoelectric constant were obtained in epitaxial PZT films on Nb:STO than in textured PZT films on platinized silicon.The intrinsic and extrinsic contributions to high piezoelectric response of epitaxial PZT films were also discussed.

机译：Zr / Ti比为53/47的织构外延Pb（ZrxTi1-x）O3（PZT）薄膜通过溶胶-凝胶法沉积在不同的衬底上，发现PZT薄膜沉积在Pt（111）/ Ti / SiO2上/ Si（100）衬底使用氧化物籽晶层（氧化铅或二氧化钛）导致高度纹理化取向，而在不同取向的Nb掺杂SrTiO3（Nb：STO）单晶晶片上获得外延PZT膜。讨论了织构和外延PZT薄膜的取向和相结构，并评价了优先取向的铁电和压电性能之间的关系.Nb：STO上的外延PZT薄膜比织构PZT薄膜具有更高的剩余极化和压电常数还讨论了外延PZT薄膜对高压电响应的内在和外在贡献。

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来源
《Proceedings of 4th International Workshop on Piezoelectric Materials and Applications in Actuators》|2007年|15-21|共7页
会议地点 Nanjing(CN)
作者
GAO Dong; rnZHANG Beike; rnMA Xin;
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作者单位

ZhiXiang Zhu@Department of Materials Science and Engineering,State Key Laboratory of New Ceramics and Fine Processing,Tsinghua University,Beijing 100084,People's Republic of China--JingFeng Li@Department of Materials Science and Engineering,State Key Laboratory of New Ceramics and Fine Processing,Tsinghua University,Beijing 100084,People's Republic of China--;

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正文语种 eng
中图分类压电陶瓷材料;
关键词
PZT film; Texture; Epitaxial growth; Piezoeletric property;

机译：PZT薄膜;纹理;外延生长;压电性能;

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Preparation and Property of Textured and Epitaxial PZT Films on Different Substrates

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