Determine of Sub 50 nm CD Metrology Using by AFM

机译：使用AFM确定50 nm以下的CD计量

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The critical dimension (CD) is decreasing rapidly in semiconductor fabrication as a result of industrial demand. In order to avoid measurement of the doublet and to support the specifications for submicron features, advanced standard laboratories in many countries are attempting to develop traceable measurement systems based on the present standards. Accurate CD determination is difficult to achieve by CD scanning electron microscopy (CD-SEM) and conventional atomic force microscopy (AFM). The specimen is prone to being burnt under the high electric current used in CD-SEM.

机译：由于工业需求，临界尺寸（CD）在半导体制造中正在迅速减小。为了避免双峰的测量并支持亚微米特征的规范，许多国家的高级标准实验室正在尝试根据当前标准开发可追溯的测量系统。通过CD扫描电子显微镜（CD-SEM）和常规原子力显微镜（AFM）很难实现准确的CD测定。标本易于在CD-SEM中使用的高电流下燃烧。

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来源
《Proceedings of the Twenty-sixth annual meeting of the American Society for Precision Engineering》|2011年|p.509-511|共3页
会议地点 Denver CO(US);Denver CO(US)
作者
Huay-Chung Liou; Shan-Peng Pan;
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Dimensional Lab . Center for Measurement Standards Industrial Technology Research Institute Hsinchu, TAIWAN, R.O.C.;

Dimensional Lab . Center for Measurement Standards Industrial Technology Research Institute Hsinchu, TAIWAN, R.O.C.;

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正文语种 eng
中图分类机械加工精度理论;
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2. IN QUEST OF NM ACCURACY - SUPPORTING OPTICAL METROLOGY BY RIGOROUS DIFFRACTION THEORY AND AFM TOPOGRAPHY [J] . Schroder KP., Geuther H., Herrmann C., Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 1995,第5a6期

机译：严格的衍射理论和AFM成像技术在NM精度支持光学的研究中
3. Afm Images Of G_1-phase Premature Condensed Chromosomes: Evidence For 30 Nm Changed To 50 Nm Chromatin Fibers [J] . Yihui Fan, Renfang Mao, Jing Bai, Applied Surface Science . 2008,第6期

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4. Determine of Sub 50 nm CD Metrology Using by AFM [C] . Huay-Chung Liou, Shan-Peng Pan Annual Meeting of The American Society for Precision Engineering . 2011

机译：通过AFM确定Sub 50 NM CD计量
5. Charged particle imaging methods for CD metrology of sub 22nm 3D device structures. [D] . Cepler, Aron. 2013

机译：用于22nm以下3D器件结构的CD计量的带电粒子成像方法。
6. Lateral Tip Control Effects in CD-AFM Metrology: The Large Tip Limit [O] . Ronald G. Dixson, Ndubuisi G. Orji, Ryan S. Goldband -1

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Determine of Sub 50 nm CD Metrology Using by AFM

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