首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >FERROELECTRIC DOMAIN STRUCTURES IN EPITAXIAL PbTiO_3 THIN FILMS WITH AND WITHOUT Pt ELECTRODE ON MgO(001)
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FERROELECTRIC DOMAIN STRUCTURES IN EPITAXIAL PbTiO_3 THIN FILMS WITH AND WITHOUT Pt ELECTRODE ON MgO(001)

机译:MgO(001)上有无Pt电极的PbTiO_3薄型薄膜的铁电域结构

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摘要

Epitaxial PbTiO_3 films of various thickness with and without Pt electrodes were grown on MgO(001) single crystal substrates at 650℃ by pulsed laser deposition. Their ferroelectric domain structures were investigated extensively by two-dimensional reciprocal space mapping using synchrotron X-ray. Ferroelectric domain structures and their evolution of the epitaxial PbTiO_3 films with no electrode layer and with a Pt electrode layer between the film and the MgO(001) substrate were found to be quite different. The equilibrium domain structures in epitaxial PbTiO_3 thin films are analyzed by the finite element method using a commercial package, ABAQUS. The results of FEM simulation were found to be consistent with the experimental observation. This means that the sign and magnitude of initial misfit strain and the degree of its relaxation by interfacial dislocation at the deposition temperature influence critically on the domain evolution and final domain structure in epitaxial PbTiO_3 thin films.
机译:通过脉冲激光沉积在650℃的MgO(001)单晶衬底上生长了具有和不具有Pt电极的各种厚度的外延PbTiO_3薄膜。通过使用同步加速器X射线进行二维相互空间映射,对它们的铁电畴结构进行了广泛研究。发现外延PbTiO_3薄膜不具有电极层,且在薄膜与MgO(001)衬底之间具有Pt电极层时,其铁电畴结构及其演化是完全不同的。外延PbTiO_3薄膜中的平衡域结构通过有限元方法使用商业包装ABAQUS进行分析。有限元模拟的结果被发现与实验观察一致。这意味着初始失配应变的符号和大小以及在沉积温度下界面错位引起的弛豫程度严重影响着外延PbTiO_3薄膜的畴演化和最终畴结构。

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