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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >TEMPERATURE AND OXIDE THICKNESS INFLUENCE ON THE GENERATION LIFETIME DETERMINATION IN PARTIALLY DEPLETED SOI nMOSFETs
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TEMPERATURE AND OXIDE THICKNESS INFLUENCE ON THE GENERATION LIFETIME DETERMINATION IN PARTIALLY DEPLETED SOI nMOSFETs

机译：温度和氧化物厚度对部分耗尽SOI MOSFET产生寿命的影响

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摘要

This paper presents an analysis of the gate oxide thickness and temperature influence on the carrier generation lifetime determination. The study is accomplished through two-dimensional numerical simulations in partially depleted SOI nMOSFETs and compared with experimental data of devices fabricated with a 0.13 μm SOI CMOS technology. The temperature varied from 20℃ to 80℃ and the gate oxide thickness between 1.5 nm and 3.5 nm. Beyond the generation lifetime, other electric parameters were also analyzed as the threshold voltage, the surface potential, the activation energy and the gate current. A reduction of surface potential was observed for an increase in the gate oxide thickness, specially in the steady state surface potential. In the present study, the decrease in gate oxide thickness caused a maximum of 2% variation in the activation energy. For the step bias used, the gate current is not enough large to control the body charging and makes it less sensitive to transient effects.
机译：本文介绍了栅氧化层厚度和温度对载流子寿命确定的影响。该研究是通过在部分耗尽的SOI nMOSFET中进行二维数值模拟来完成的，并与采用0.13μmSOI CMOS技术制造的器件的实验数据进行了比较。温度在20℃至80℃之间变化，栅氧化层厚度在1.5 nm至3.5 nm之间。除了发电寿命以外，还分析了其他电参数，如阈值电压，表面电势，活化能和栅极电流。观察到表面电势的降低导致栅极氧化物厚度的增加，特别是在稳态表面电势下。在本研究中，栅氧化层厚度的减小引起活化能最大2％的变化。对于所使用的阶跃偏置，栅极电流不足以控制人体充电，并使其对瞬态效应不那么敏感。

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