Copper Plating for 3D Interconnects

机译：用于3D互连的镀铜

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Cu electroplating, as a technique used in metallization of through-Si vias (TSV) for 3D-stacked integrated circuits (3D-SIC), is required to provide not only a void-free TSV fill, but also short filling time and small overburden. The overburden, the thickness of the material deposited on the top surface of the wafer, has to be limited for compatibility with the chemical mechanical polishing (CMP). Since both Cu plating and CMP contribute significantly to overall 3D process cost, duration of these processes has to be minimized.

机译：作为用于3D堆叠集成电路（3D-SIC）的硅通孔（TSV）的金属化技术，需要进行铜电镀，以提供无空隙的TSV填充，而且填充时间短且覆盖层小。为了与化学机械抛光（CMP）兼容，必须限制覆盖层，即沉积在晶片顶面上的材料的厚度。由于铜电镀和CMP均对3D总体成本有重大贡献，因此必须将这些过程的持续时间最小化。

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来源
《Processing, materials, and integration of damascene and 3D interconnects》|2009年|p.119-125|共7页
会议地点 Vienna(AT);Vienna(AT)
作者
A. Radisic; O. Ltthn; J. Vacs; S. Armini; Z. El-Mekki; et al;
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作者单位

IMEC, B-3001 Leuven, Belgium;

IMEC, B-3001 Leuven, Belgium Katholieke Universiteit Leuven, B-3001 Leuven, Belgium;

IMEC, B-3001 Leuven, Belgium;

IMEC, B-3001 Leuven, Belgium;

IMEC, B-3001 Leuven, Belgium;

et al;

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正文语种 eng
中图分类半导体技术;
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专利

1. Copper plating for 3D interconnects [J] . A. Radisic, O. Lühn, H.G.G. Philipsen, Microelectronic Engineering . 2011,第5期

机译：用于3D互连的镀铜
2. Stabilized copper plating method by programmed electroplated current: Accumulation of densely packed copper grains in the interconnect [J] . Kao Li-Chi, Hsu Li-Hsuan, Brahma Sanjaya, Applied Surface Science . 2016,第ptaA期

机译：通过编程的电镀电流稳定镀铜的方法：互连中密集堆积的铜颗粒的堆积
3. 3D Printings: Binuclear Copper Complex Ink as a Seed for Electroless Copper Plating Yielding >70% Bulk Conductivity on 3D?Printed Polymers (Adv. Mater. Interfaces 8/2018) [J] . Farraj Yousef, Layani Michael, Yaverboim Avi, Advanced materials interfaces . 2018,第8期

机译：3D打印：Binuclear铜复合墨水作为化学镀铜的种子，屈服于3D的散装电导率> 3D？印刷聚合物（ADV。母体。接口8/2018）
4. Integrated process for defect-free copper plating and chemical-mechanical polishing of through-silicon vias for 3D interconnects [C] . Malta, Dean, Gregory, Christopher, Temple, Dorota, ECTC 2010;Electronic Components and Technology Conference . 2010

机译：用于3D互连的无缺陷铜电镀和化学硅抛光通孔的集成工艺
5. Electrodeposition of copper-cobalt alloys and copper-nickel alloys and pulse plating of copper-cobalt alloys [D] . Wang, Shuisheng. 1989

机译：铜钴合金和铜镍合金的电沉积以及铜钴合金的脉冲镀
6. Structure Inheritance in Nanoparticle Ink Direct-Writing Processes and Crack-Free Nano-Copper Interconnects Printed by a Single-Run Approach [O] . Shujie Liu, Yujie Li, Songling Xing, 2019

机译：通过单次运行方法打印的纳米粒子墨水直写过程和无裂纹纳米铜互连中的结构继承
7. Interconnect Fabrication by Electroless Plating on 3D-Printed Electroplated Patterns [O] . -1

机译：在3D印刷电镀图案上通过无电镀互连制造
8. Determination of Copper Cyanide Plating Solutions and Cadmium in Cadmium Cyanide Plating Solutions by Atomic Absorption Spectrometry [R] . Sopok, S. 1992

机译：原子吸收光谱法测定氰化镉镀液中氰化铜电镀液和镉

Copper Plating for 3D Interconnects

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