Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction

著录项

• 来源
  《Silicon carbide and related materials 2012》|2012年|1006-1009|共4页
• 会议地点 St. Petersburg(RU)
• 作者

  P. M. Gammon; A. Perez-Tomas; M. R. Jennings; A. M. Sanchez; C. Fisher; S. T. Thomas; B. T. Donnellan; P. A. Mawby;

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• 作者单位

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

  IMB-CNM-CSIC, Campus UAB, 08193 Barcelona, Spain;

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

  Department of Physics, University of Warwick, Coventry, CV4 7AL, UK;

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

  School of Engineering, University of Warwick, Coventry, CV4 7AL, UK;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Silicon Carbide; Heterojunction; PiN Diode; Bipolar conduction; Wafer bonding; TEM;

  机译：碳化硅；异质结； PiN二极管；双极传导；晶圆键合；透射电镜;