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Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001)

机译：n型alpha（6H）SiC（0001）上肖特基和欧姆接触的沉积和表征

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The electrical behavior and the interfacial chemistry and microstructure have been determined for the Ti, Pt, Hf, and Co/6H-SiC systems. Deposited in their pure form onto unheated, n-type, chemically-cleaned substrates via UHV electron beam evaporation, the metals formed excellent rectifying contacts with ideality factors below 1.1 and leakage currents as low as 2× 10~(-8 )A/cm~2 at -10 V. Titanium, Pt, and Hf remained rectifying after annealing at 700 - 750℃; Co became ohmic-like after heating to 1000℃. Substantial inter-diffusion and phase evolution occurred at each metal/SiC interface during the anneals.

机译：已经确定了Ti，Pt，Hf和Co / 6H-SiC系统的电行为以及界面化学和微观结构。这些金属通过超高压电子束蒸发以纯净的形式沉积在未加热的n型化学清洁衬底上，形成了理想的整流系数，理想因子低于1.1，漏电流低至2×10〜（-8）A / cm -10 V时为〜2。钛，铂和H在700-750℃退火后仍保持整流。加热到1000℃后，Co变成欧姆状。在退火期间，每个金属/ SiC界面处发生大量的相互扩散和相变。

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来源
《Silicon carbide and related materials》|1993年|581-584|共4页
会议地点 Washington DC(US);Washington DC(US)
作者
L.M. Porter; R.F. Davis; J.S. Bow; M.J. Kim; R.W. Carpenter;
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作者单位

Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907;

Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704;

Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704;

Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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1. Thermally stable, low specific resistance (1.30 x 10~(-5) Ω cm~2) TiC Ohmic contacts to n-type 6Hα-SiC [J] . A. K. Chaddha, J. D. Parsons, G. B. Kruaval Applied Physics Letters . 1995,第6期

机译：热稳定，低电阻率（1.30 x 10〜（-5）Ωcm〜2）TiC欧姆接触n型6Hα-SiC
2. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC [J] . Omotoso E., Meyer W. E., Coelho S. M. M., Materials science in semiconductor processing . 2016,第Null期

机译：在n型4H-SiC上W肖特基触点的电子束沉积过程中引入的缺陷的电特性
3. Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts [J] . Jung-Chien Cheng, Bing-Yue Tsui Electron Devices, IEEE Transactions on . 2018,第9期

机译：快速热退火对Ar感应耦合等离子体处理的n型4H-SiC肖特基和欧姆接触的影响
4. Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001) [C] . International conference on SiC and related materials . 1994

机译：N型α（6H）SiC上肖特基和欧姆触点的沉积和表征SiC（0001）
5. Electrical, chemical, and structural characterization of gold Schottky contacts on remote plasma-treated n-type zinc oxide{lcub}0001{rcub}. [D] . Coppa, Brian Joseph. 2003

机译：远程等离子体处理的n型氧化锌{lcub} 0001 {rcub}上金肖特基触头的电，化学和结构表征。
6. Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions [O] . Masao Kaneko, Hirohito Ueno, Junichi Nemoto 2015

机译：纳米多孔TiO2薄膜光阳极与氧化还原电解质溶液接触的肖特基结/欧姆接触行为
7. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC [O] . Omotoso, Ezekiel, Meyer, W.E. (Walter Ernst), Coelho, Sergio M.M., 2016

机译：n型4H-siC上W肖特基接触电子束沉积过程中引入缺陷的电学特性

Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001)

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