Point defects in silicon carbide

机译：碳化硅中的点缺陷

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The results of experimental studies of point defects in SiC crystals both as-grown and induced by high energy particles bombardment are discussed. The data obtained suggest an essentially non-equilibrium nature of point defects in SiC. lntcrsitial and vacancy type clusters stable within the temperature range 1100-2900K have been revealed. In the crystals grown at relatively low temperatures T_g<2400K clusters are proposed to be a source of non-equilibrium native point defects.

机译：讨论了由高能粒子轰击产生和诱导的SiC晶体中点缺陷的实验研究结果。所获得的数据表明，SiC中点缺陷的本质是非平衡性质。已经揭示出在1100-2900K温度范围内稳定的灵敏和空位型团簇。在较低温度下生长的晶体中，T_g <2400K簇被认为是非平衡本征点缺陷的来源。

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《Silicon carbide and related materials》|1993年|197-206|共10页
会议地点 Washington DC(US);Washington DC(US)
作者
Yu. A.Vodakov; E.N.Mokhov;
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A.F.Ioffe Physical-Technical Institute Academy of Science of Russia 194021 St.-Petersburg, Russia;

A.F.Ioffe Physical-Technical Institute Academy of Science of Russia 194021 St.-Petersburg, Russia;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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Point defects in silicon carbide

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