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Crystal growth of SiC on AIN/sapphire by cvd method

机译：通过CVD方法在AIN /蓝宝石上生长SiC晶体

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摘要

Single crystalline SiC was grown on AlN/sapphire(0001) substrate by atmospheric pressure CVD method. In Si2H6/C2H2/H2 gas system, optimum temperature forrnepitaxial growth was 1400℃. Undoped layers showed p-type conduction. A single crystalline layer was also obtained by HMDS/H2 gas system with a small amount of TMA at arnsubstrate temperature of 1100℃. 5μm thick epitaxial layer was successfully obtained with no crack. In CL measurement at 4K, main peak from the SiC layer appeared at a wavelength ofrn430 nm. The layer was considered to be alpha-SiC.
机译：通过大气压CVD法在AlN / sapphire（0001）衬底上生长单晶SiC。在Si2H6 / C2H2 / H2气系统中，外延生长的最佳温度为1400℃。未掺杂层显示出p型导电。通过HMDS / H2气体系统在1100℃的基板温度下也得到了少量的TMA单晶层。成功获得了5μm厚的外延层，没有裂纹。在4K的CL测量中，来自SiC层的主峰出现在波长430nm处。该层被认为是α-SiC。

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  • 来源
  • 会议地点 Washington DC(US);Washington DC(US)
  • 作者

    S. Nishino; K. Takahashi; H. Tanaka; J. Saraie;

  • 作者单位

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606, JAPAN;

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606, JAPAN;

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606, JAPAN;

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606, JAPAN;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 硅酸盐工业;无机质材料;
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