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Nanobonding for Multi-Junction Solar Cells at Room Temperature

机译:室温下多结太阳能电池的纳米键合

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摘要

Direct nanobonding of p-Si/w-GaAs wafers based on surface activation that uses an Argon (Ar)-fast atom beam at room temperature has been investigated. The bonding strength of the interface was 14.4 MPa at room temperature, and remained nearly constant after annealing up to 600 °C. An amorphous layer with a thickness of 11.5 nm was found across the interface without annealing. After annealing, the electrical current-voltage (I-V) characteristics were improved and the amorphous layer was diminished across the interface. The thermal stability of the interfacial properties of Si/GaAs indicates its potential use on the fabrication of multi-junction solar cells with Si substrate to lower the cost while improving the solar cells' efficiency. The thickness dependence of p-Si-Si interfacial I-V characteristics using COMSOL simulation indicates the decrease of breakdown voltage and current with the increase of the junction thickness.
机译:已经研究了基于表面活化的p-Si / w-GaAs晶片在室温下直接纳米键合的方法,该方法使用耐氩(Ar)快速原子束。界面的结合强度在室温下为14.4 MPa,在退火至600°C后几乎保持恒定。发现在整个界面上没有退火的厚度为11.5nm的非晶层。退火后,电流-电压(I-V)特性得到改善,非晶层在界面上减小。 Si / GaAs的界面性质的热稳定性表明其潜在地用于具有Si衬底的多结太阳能电池的制造中,以在降低成本的同时提高太阳能电池的效率。使用COMSOL仿真的p-Si / n-Si界面I-V特性的厚度依赖性表明,随着结厚度的增加,击穿电压和电流会降低。

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  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者单位

    Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4K1, Canada;

    Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4K1, Canada;

    Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4K1, Canada;

    Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4K1, Canada;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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