A kinetic model for the mocvd of Cd-Te

机译：Cd-Te分子运动的动力学模型

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The epitaxial deposition of cadmum telluride through metal-organic chemical vapor deposition (MOCVD) was here investigated. A detailed elementary knetic scheme of surface and gas reactions occurring during the depositon process was developed. A peculiar feature of the model we propose is an elemenary non-dissociative adsorption reaction of the precursors on the deposition surface. The kinetic constants of the gas phase reactions were found in the literature while the most important surface processes were dientified and studied with quantum chemistry methods. All the quantum chemistry chalulations were performed through the three parameters Becke-Lee-Yang-Parr hybrid (B3LYP) density functional theory using the 3-21G~(**) basis set. The effect of changine carrier gas on the deposition chemistry was as well investigated.

机译：本文研究了通过金属有机化学气相沉积（MOCVD）外延沉积碲化镉。开发了在沉积过程中发生的表面和气体反应的详细基本动力学方案。我们提出的模型的一个特殊特征是沉积表面上前体的元素非离解吸附反应。在文献中发现了气相反应的动力学常数，同时对最重要的表面过程进行了二元化，并用量子化学方法进行了研究。使用3-21G〜（**）基集，通过Becke-Lee-Yang-Parr杂化三参数（B3LYP）密度泛函理论进行了所有的量子化学计算。还研究了丁氨酸载气对沉积化学的影响。

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《Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis》||p.46-51|共6页
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Carlo Cavallotti; Cecilia Medeossi; Caterina Turconi; Maurizio Masi; Sergio Carra;
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中图分类轻工业、手工业;
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4. A kinetic model for the mocvd of Cd-Te [C] . Carlo Cavallotti, Cecilia Medeossi, Caterina Turconi, Symposium on fundamental gas-phase and surface chemistry of vapor-phase materials synthesis . 1999

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A kinetic model for the mocvd of Cd-Te

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