Synthesis of Ⅲ-N_x-V_(l-x) Thin Films by N Ion Implantation

机译：N离子注入法合成Ⅲ-N_x-V_（l-x）薄膜

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Dilute III-N_x-V_(l-x) alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N_x-V_(l-x) alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN_xAs_(l-x) and InN_xP_(l-x) thin films. The fraction of N occupying anion sites ("active" N) in the GaN_xAs_(l-x) layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN_xP_(l-x) alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

机译：通过在GaAs和InP中氮注入成功地合成了稀III-N_x-V_（l-x）合金。发现离子束合成的III-N_x-V_（lx）合金的基本带隙能随着氮注入剂量的增加而降低，其方式与在外延生长的GaN_xAs_（lx）和InN_xP_（lx）薄膜中通常观察到的方式相似。。通过N注入形成的GaN_xAs_（1-x）层中的N占据阴离子位点的部分（“活性” N）是热不稳定的，并且随着退火温度的升高而降低。相反，通过在InP中进行N注入，合成了N摩尔分数高达0.012的热稳定的InN_xP_（1-x）合金。而且，在相似的处理条件下，InP中的N活化效率比GaAs中的N活化效率至少高两倍。通过将Ga和N共注入GaAs中，可以改善GaAs中的低N活化效率（<20％）。

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《Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.13.3.1-13.3.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
K. M. Yu; W. Walukiewicz; W. Shan; J. Wu; J. W. Bccman; J. W. Agcr III; E. E. Hallcr; M.C. Ridgway;
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Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720;

OptiWork, Inc. Fremont, CA 94538;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Structural and dielectric properties of the lead-free (l-x)K_(0.5)Na_(0.5)NbO_3-xSrTiO_3 thin films from solutions [J] . Alja Kupec, Barbara Malic Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2014,第Null期

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3. Characteristics of Ba_xSr_(l-x)TiO_3 thin films grown by pulsed laser ablation of rotating split targets of BaTiO_3 and SrTiO_3 [J] . F.F. HAU, S.G. LU, K.M. YEUNG, Applied Physics. A, Materials Science & Processing . 2004,第7期

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4. Synthesis of Ⅲ-N_x-V_(l-x) Thin Films by N Ion Implantation [C] . W. W, M.C. Ridgway, E. E. Hallcr, Materials Research Society Symposium . 2001

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Synthesis of Ⅲ-N_x-V_(l-x) Thin Films by N Ion Implantation

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