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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Modeling for the Diamond-Like Carbon Film Synthesis by Plasma Based Ion Implantation
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Modeling for the Diamond-Like Carbon Film Synthesis by Plasma Based Ion Implantation

机译：等离子体基离子注入合成类金刚石碳膜的建模

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Dynamic Monte Carlo simulations with the binary collision approximation have been applied to the synthesis of hydrogenated amorphous carbon (a-C:H) films by plasma based ion implantation (PBII). We take as representative carbon carriers energetic CH_3~+ ions and CH_3 radicals. The direct chemical incorporation of the radicals, like CH_3 reacting with a diamond surface, is too low for the deposition of DLC films, so that the other reaction mechanisms should be responsible. We assumed (a) complete dissociation of CH_3~+ ions into one C atom and three H atoms with identical velocities upon bombarding the surface, (b) a unity and only one mono-layer sticking of CF_3 radicals on the surface, (c) incorporation (stitching) of H and C atoms under the surface induced by binary collisions with energetic CH_3~+ ions, (d) release of H atoms by the dissociation of CH_3 radicals on the surface, and (e) release of a part of displaced H atom after the subsequent collision cascade. We also assumed only the stitched carbon atoms form sp~3 states and all other carbon atoms form sp~2 states. The effect of the target voltage on the ion dose was also included. The effects of ioneutral arrival ratio and ion energy on the growth rate, the mixing layer thickness, the hydrogen content, and the sp~3/sp~2 ratio in the deposited film are presented.
机译：具有二元碰撞逼近的动态蒙特卡洛模拟已应用于通过基于等离子体的离子注入（PBII）合成氢化非晶碳（a-C：H）薄膜。以高能CH_3〜+离子和CH_3自由基为代表的碳载体。自由基的直接化学结合（例如与钻石表面反应的CH_3）对于DLC膜的沉积而言太低，因此其他反应机理应该负责。我们假设（a）在轰击表面时将CH_3〜+离子完全解离为一个C原子和三个H原子，具有相同的速度；（b）一个统一且CF_3自由基仅单层粘附在表面上的（c）与高能CH_3〜+离子的二元碰撞引起的表面下H和C原子的掺入（缝合），（d）通过CH_3自由基在表面上的解离释放H原子，（e）释放一部分被取代的H原子在随后的碰撞级联之后。我们还假设只有缝合的碳原子形成sp〜3状态，而所有其他碳原子形成sp〜2状态。还包括目标电压对离子剂量的影响。提出了离子/中性到达比和离子能量对生长速率，混合层厚度，氢含量以及沉积膜中sp〜3 / sp〜2比的影响。

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