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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Dielectric response of free standing strontium titanate thin films from 10KHz to 1GHz as a function of temperature and applied voltage
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Dielectric response of free standing strontium titanate thin films from 10KHz to 1GHz as a function of temperature and applied voltage

机译：10KHz至1GHz的钛酸锶锶薄膜的介电响应随温度和施加电压的变化

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摘要

Using pulsed laser ablation, we have grown epitaxial bilayers of strontium titanate (STO) and yttrium barium copper oxide (YBCO) and (110) neodymium gallate (NGO) substrates. Usin ga selective acid etch, we have removed the YBCO from the middle of the bilayer and lifted off the STO films from their parent substrates. Using coplanar interdigital capacitors patterned on the surface of the films, we have measured the capacitance and loss as a function of frequency (from 10 kHz to 1 GHz), temperature (from 300 K to 4 K), and applied electric field (up to roughly 2V/ um m). We have seen frequency dependent loss peaks in the films that indicate thermally activated behavior, and an improvement in the tuning quality.
机译：使用脉冲激光烧蚀，我们已经生长了钛酸锶（STO）和氧化钡钡铜氧化物（YBCO）和（110）没食子酸钕（NGO）衬底的外延双层。在进行选择性酸蚀刻时，我们从双层中间去除了YBCO，并从其母体衬底上剥离了STO膜。使用在膜表面上构图的共面叉指电容器，我们测量了电容和损耗随频率（从10 kHz到1 GHz），温度（从300 K到4 K）和施加的电场（直到大约2V / um m）。我们已经看到了薄膜中随频率变化的损耗峰，表明了热激活行为，并提高了调谐质量。

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