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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Characterization of Si,SiGe and soi structures using photoluminscence
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Characterization of Si,SiGe and soi structures using photoluminscence

机译：利用光致发光表征Si，SiGe和soi结构

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摘要

A mew Photoluminescence (PL) method has been developed to detect defects in the near surface region of Si wafers and Si-on-insulator (SOI) structures. Wafter maps (up to 300 mm diameter) can be readily acquired and areas of interest can be scanned at high resolution (approx approx mu m). The excitation laser beam is modulated to confine the photogenerated carriers; defects are observed due to the localised reduction of the carrier lifetime. Si p-tpye (10 Ohm.cm) wafers were intentionally contaminated with various levels of Ni and Fe (1x10~9-5x10~(10) atoms/cm~2) and annealed. The PL intensity was observed to decrease due to the metal related non-radiative defects. Whereas in contrast, for Cu, (1x10~9-5x10~(10) atoms/cm~2) the PL intensity actually increased initially and reached a maximum value at 5x10~9 atoms/cm~2. It is suggested that during contaimination the Cu related defects have complexed with existing defects (that have stronger recombination properties) and increased th PL. Further Cu contaimination (1x10~(10)-5x10~(10) atoms/cm~2) produced a reduction in the PL intensity. PL mapping of strained SiGe epilayers showed that misfit dislocations can be detected and PL can be used to evaluate material quality.
机译：已经开发了一种光致发光（PL）方法来检测Si晶片和绝缘体上硅（SOI）结构的近表面区域中的缺陷。可以轻松获取Wafter地图（最大直径为300毫米），并且可以高分辨率（约微米）扫描感兴趣的区域。调制激发激光束以限制光生载流子；由于载流子寿命的局部降低而观察到缺陷。 Si p-tpye（10 Ohm.cm）晶片被故意污染了各种水平的Ni和Fe（1x10〜9-5x10〜（10）原子/ cm〜2）并退火。观察到PL强度由于金属相关的非辐射缺陷而降低。相比之下，对于Cu（1x10〜9-5x10〜（10）原子/ cm〜2），PL强度实际上开始增加，并在5x10〜9atoms / cm〜2时达到最大值。建议在污染过程中，与铜有关的缺陷会与现有缺陷（具有更强的复合性能）复杂化并增加PL。进一步的Cu污染（1×10〜（10）-5×10〜（10）原子/ cm〜2）导致PL强度降低。应变SiGe外延层的PL映射显示，可以检测到失配位错，并且可以将PL用于评估材料质量。

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