Optical Properties of InAs/lnP Planar Quantum Dot Microcavities

机译：InAs / lnP平面量子点微腔的光学性质

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Planar InAs/InP quantum dot microcavities using multi-layer SiO_2/Ta_2O_5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ～1meV with the occasional ～200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.

机译：在发射中研究了使用多层SiO_2 / Ta_2O_5布拉格反射器的平面InAs / InP量子点微腔。光谱显示出受光学限制的腔线宽为〜1meV，偶发点为〜200μeV。作为入射功率的函数的测量显示出量子点饱和行为，其中振荡器强度转移到腔阻带之外的润湿层。还观察到在固定泵功率下的饱和行为是温度降低的函数。色散测量值作为发射角的函数，表明偏振分裂与理论定性一致。

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《Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.53-58|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Dan Dalacu; Daniel Poitras; Jacques Lefebvre; Philip J. Poole; Geoff C. Aers; Robin L. Williams;
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作者单位

Institute for Microstructural Sciences, National Research Council, Ottawa, K1 A OR6, Canada;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Optical properties and morphology of InAs/lnP (113)B surface quantum dots [J] . A. Nakkar, H. Folliot, A. Le Corre, Applied Physicsletters . 2008,第23期

机译：InAs / lnP（113）B表面量子点的光学性质和形态
3. On the relationship between electrical and electro-optical characteristics of InAs/lnP quantum dot lasers [J] . Mikhelashvili V., Eyal O., Khanonkin I., Journal of Applied Physics . 2018,第5期

机译：InAs / lnP量子点激光器的电光特性之间的关系
4. Optical Properties of InAs/lnP Planar Quantum Dot Microcavities [C] . Dan Dalacu, Daniel Poitras, Jacques Lefebvre, MRS Meeting . 2003

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5. Electronic structure and optical properties of self-assembled InAs quantum dots. [D] . Yang, Weidong. 1999

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6. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography [O] . Paweł Holewa, Jakub Jasiński, Artem Shikin, 2021

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7. Erratum: Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity [O] . Gallardo, E., Martínez, L. J., Nowak, A. K., 2012

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Optical Properties of InAs/lnP Planar Quantum Dot Microcavities

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