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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >Cathodoluminescence and microRaman study of GaN ELO structures
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Cathodoluminescence and microRaman study of GaN ELO structures

机译：GaN ELO结构的阴极发光和微拉曼研究

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摘要

Epitaxial Lateral Overgrowth (ELO) is an effective method to reduce dislocations in heterostructures with large lattice mismatch. This method has been widely used to improve the quality of GaN layers. We present herein a study of the properties of ELO GaN layers grown by HVPE from an MOVPE GaN buffer layer. Cathodoluminescence shows a strong enhancement of the luminescence emission in the ELO regions, where TEM has proven the absence of dislocations. Local Cathodoluminescence spectra show that this enhancement is mostly due to the yellow luminescence band. Besides Donor-Acceptor Pair recombination bands are observed in the near band gap spectral range. Raman data show that the ELO layers present a good crystalline quality. The Raman spectra did not reveal the presence of free carriers in concentration high enough to allow the presence of Longitudinal Optic Phonon Plasmon Coupled modes. The results are discussed in terms of the incorporation of impurities in the ELO layers together with the formation of compensating deep acceptors, probably V_(Ga).
机译：外延横向过度生长（ELO）是减少晶格失配较大的异质结构中位错的有效方法。该方法已被广泛用于改善GaN层的质量。我们在本文中对HVPE从MOVPE GaN缓冲层生长的ELO GaN层的性能进行了研究。阴极发光显示ELO区域的发光发射显着增强，其中TEM已证明不存在位错。局部阴极发光光谱表明，这种增强主要归因于黄色发光带。此外，在近带隙光谱范围内观察到供体-受体对重组带。拉曼数据表明，ELO层具有良好的结晶质量。拉曼光谱没有揭示出存在足够高的浓度以允许存在纵向光学声子等离子体耦合模式的自由载流子。根据杂质在ELO层中的掺入以及补偿性深受体（可能是V_（Ga））的形成来讨论结果。

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