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Magnetic Force Microscopy Imaging of Current Paths

机译:电流路径的磁力显微镜成像

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摘要

We demonstrate Magnetic Force Microscopy (MFM) imaging, at room temperature in air, of a 0.25mA DC current path in a 140nm-wide gold nanowire. The nanowire was created by focused ion beam milling of a 12μm wide Cr/Au line of 20nm/110nm Cr/Au thickness. Iterative fitting of the MFM data to an idealized model of the structure yielded a nanowire resistivity a factor of 3.5 higher than that of a control Cr/Au region which was unaffected by the ion beam processing. MFM imaging of an ion-implant patterned line shows current deflection around the implant region.
机译:我们演示了在空气中室温下在140nm宽的金纳米线中0.25mA直流电流路径的磁力显微镜(MFM)成像。纳米线是通过聚焦离子束铣削,形成厚度为20nm / 110nm Cr / Au的12μm宽Cr / Au线。将MFM数据迭代拟合到结构的理想模型后,纳米线电阻率比不受离子束处理影响的控制Cr / Au区域高3.5倍。离子注入图案化线的MFM成像显示了注入区域周围的电流偏转。

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