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首页> 外文会议>Terahertz emitters, receivers, and applications VI >High Transmittance Silicon Terahertz Polarizer Using Wafer Bonding Technology
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High Transmittance Silicon Terahertz Polarizer Using Wafer Bonding Technology

机译：晶圆键合技术的高透射率硅太赫兹偏振器

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摘要

Due to the difficulties faced in fabricating robust Terahertz (THz) optical components with low Fresnel reflection loss, the need to increase the efficiency of THz system with reduced cost is still considered as one of the most essential tasks. In this report, a new low cost THz polarizer with robust structure is proposed and demonstrated. This new THz wire grid polarizer was based on an anti-reflection (AR) layer fabricated with low temperature metal bonding and deep reactive-ion etching (DRIE). After patterning Cu wire gratings and the corresponding In/Sn solder ring on the individual silicon wafers, the inner gratings were sealed by wafer-level Cu to In/Sn guard ring bonding, providing the protection against humidity oxidation and corrosion. With the low eutectic melting point of In/Sn solder, wafers could be bonded face to face below 150℃. Two anti-reflection layers on both outward surfaces were fabricated by DRIE. With the mixing of empty holes and silicon, the effective refractive index was designed to be the square root of the silicon refractive index. The central frequency of the anti-reflection layers was designed between 0.5THz to 2THz with an approximate bandwidth of 0.5THz. The samples were measured with a commercial free-standing wire grid polarizer by a THz time domain spectroscopy (THz-TDS) from 0.2THz to 2.2THz. The power transmittance is close to 100% at central frequency. Extinction ratio of the polarizer is between 20dB to 40dB depending on the frequency. The advantages of this new polarizer include high transmittance, robust structure andlow cost with no precision optical alignment required.
机译：由于在制造具有低菲涅耳反射损耗的坚固的太赫兹（THz）光学组件时面临的困难，仍然需要以降低的成本提高THz系统的效率，这仍然是最重要的任务之一。在本报告中，提出并演示了一种新型的具有坚固结构的低成本太赫兹偏振器。这种新型的THz线栅偏振器基于通过低温金属键合和深反应离子刻蚀（DRIE）制成的减反射（AR）层。在各个硅晶片上对铜线栅和相应的In / Sn焊环进行构图后，内部晶片通过晶片级的Cu与In / Sn保护环粘接而密封，从而提供了防止湿气氧化和腐蚀的保护。由于In / Sn焊料的低共熔熔点，因此可以在150℃以下面对面地粘合晶片。通过DRIE在两个向外的表面上制造两个抗反射层。随着空孔和硅的混合，有效折射率被设计为硅折射率的平方根。抗反射层的中心频率被设计在0.5THz至2THz之间，大约带宽为0.5THz。使用商业自立式线栅偏振器通过0.2 Hz至2.2 THz的THz时域光谱（THz-TDS）测量样品。中心频率下的功率传输率接近100％。偏振器的消光比在20dB至40dB之间，具体取决于频率。这种新型偏振器的优点包括高透射率，坚固的结构和低成本，而无需精确的光学对准。

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  • 来源
  • 会议地点 San Diego CA(US)
  • 作者

    Ting-Yang Yu; Hsin-Cheng Tsai; Shiang-Yu Wang; Chih-Wei Luo; Kuan-Neng Chen;

  • 作者单位

    Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

    Institute of Astronomy and Astrophysics, Academia Sinica, 11F of Astronomy-Mathematics Building, No.l, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, R.O.C.;

    Department of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    wire grid polarizer; terahertz wave; anti-reflection; wafer bonding; eutectic point; DRIE;

    机译：线栅偏振器太赫兹波防反射晶圆键合；共晶点DRIE;

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