High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

机译：使用电子回旋波共振等离子体源高速率沉积ta-C：H

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 1.5 nm/s over a 4-inch diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized as having an sp~3 content of up to 77

机译：已经开发出紧凑的电子回旋波共振（ECWR）源，用于高速率沉积氢化四面体无定形碳（ta-C：H）。 ECWR在4英寸直径上提供高达1.5 nm / s的生长速率，并独立控制沉积速率和离子能量。使用乙炔作为原料气沉积ta-C：H，其sp〜3含量高达77

著录项

来源
《Thin film materials for large area electronics》|1998年|p.71-73|共3页
会议地点 Strasbourg(FR)
作者
N.A.Morrison; S.E.Rodil; A.C.Ferrari; J.Robertson; W.I.Milne;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Electron cyclotron wave resonance; Tetrahedral amorphous carbon; High rate deposition;

机译：电子回旋波共振；四面体无定形碳；高速率沉积;

相似文献

外文文献
中文文献
专利

1. Production of electron cyclotron resonance plasma by using multifrequencies microwaves and active beam profile control on a large bore electron cyclotron resonance ion source with permanent magnets a [J] . Yushi Kato Takeyoshi Watanabe Yuuki Matsui Yoshiaki Hirai Osamu Kutsumi Naoki Sakamoto Fuminobu Sato and Toshiyuki Iida Review of Scientific Instruments . 2010,第2期

机译：a 在具有大磁体的大口径电子回旋共振离子源上利用多频微波和有源束轮廓控制产生电子回旋共振等离子体
2. Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source [J] . S. Rodil, N. A. Morrison, W. I. Milne, Diamond and Related Materials . 2000,第3a6期

机译：使用电子回旋波共振等离子体源沉积氮化碳膜
3. Mechanical properties of DLC films prepared in acetylene and methane plasmas using electron cyclotron resonance microwave plasma chemical vapor deposition [J] . K.H. Lai, C.Y. Chan, M.K. Fung Diamond and Related Materials . 2001,第9a10期

机译：电子回旋共振微波等离子体化学气相沉积法在乙炔和甲烷等离子体中制备的DLC膜的机械性能
4. High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source [C] . N. A. Morrison, S. E. Rodil, A. C. Ferrari, Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

机译：使用电子回旋波共振等离子体源的Ta-C：H的高速率沉积
5. Determination of the chemical composition of electron cyclotron resonance microwave plasmas suitable for diamond deposition. [D] . Webb, Sharon Faye. 2000

机译：确定适用于金刚石沉积的电子回旋共振微波等离子体的化学成分。
6. Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave mm-wave and terahertz- bands [O] . A. Kriisa, R. L. Samaraweera, M. S. Heimbeck, -1

机译：高迁移率GaAs / AlGaAs 2D电子系统中回旋加速器在微波毫米波和太赫兹波段上的共振
7. The Preparation, Characterization and Tribological Properties of TA-C: H Deposited Using an Electron Cyclotron Wave Resonance Plasma Beam Source [O] . 1998

机译：电子回旋波共振等离子束源沉积Ta-C：H的制备，表征及摩擦学性能
8. Cu deposition using a permanent magnet electron cyclotron resonance microwave plasma source [R] . Berry, L. A., Gorbatkin, S. M., Rhoades, R. L. 1994

机译：Cu沉积使用永磁电子回旋共振微波等离子体源

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

摘要

著录项

相似文献

相关主题

期刊订阅