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Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices

机译：准单晶硅薄膜器件的先进准分子激光退火工艺

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An advanced excimer-laser annealing method, named phase-modulated excimer-laser annealing method, has been reviewed for large grain growth in Si thin-films. The laser-light intensity is modulated two-dimensionally on the Si film surface that triggers a lateral motion of the melt-solid interface, resulting in the lateral grain growth. The intensity distribution can be disigned well by a phase-shift concept. Large grains were grown at pre-designed positions at 500 deg C, and are expected to possibly be aligned with less than 30 #mu#m in pitch. The method seems attractive for high-performance and quasi single-crystal thin-film devices, which include thin-film transistors, silicon-on-insulator-based ULSIs, solar-cells and porous Si photonic devices. direct c 1999 Elsevier Science S.A. All rights reserved.
机译：对于硅薄膜中的大晶粒生长，已经研究了一种先进的准分子激光退火方法，称为相调制准分子激光退火方法。激光强度在Si膜表面上进行二维调制，从而触发熔体-固相界面的横向运动，从而导致横向晶粒生长。强度分布可以通过相移概念很好地分配。大晶粒在500摄氏度的预先设计位置生长，并且有望以小于30＃μm的间距排列。该方法似乎对高性能和准单晶薄膜器件具有吸引力，这些器件包括薄膜晶体管，基于绝缘体上硅的ULSI，太阳能电池和多孔Si光子器件。直接c 1999 Elsevier Science S.A.保留所有权利。

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