TEM study of InAs self-assembled quantum dots in GaAs

机译：GaAs中InAs自组装量子点的TEM研究

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InAs self-assembled quantum dots grown on GaAs(001) substrate were investigated by TEM as well as by electrical transport measurements. The TEM analysis revealed the presence of a complicated triple-layer structure instead of simple dots for high In-concentrations. The electrical measurement suggest that the dots act as controllable scattering centers. A saturation of the mobility is observed for the highest dot density samples.

机译：通过TEM以及电迁移测量研究了在GaAs（001）衬底上生长的InAs自组装量子点。 TEM分析表明存在复杂的三层结构，而不是用于高In浓度的简单点。电学测量表明这些点充当可控制的散射中心。对于最高的点密度样品观察到迁移率的饱和。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.38-41|共4页
会议地点 Strasbourg(FR)
作者
E. Muller; E. Ribeiro; T. Heinzel; K. Ensslin; G. Medeiros-Ribeiro; P.M. Petroff;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
InAs/GaAs; Self-assembled quantum dots; Transmission electron microscopy; Electrical transport;

机译：InAs / GaAs；自组装量子点；透射电子显微镜；电力运输;

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专利

1. Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots [J] . Ming Gong, Kaimin Duan, Chuan-Feng Li, Physical review. B, Condensed Matter And Materials Physics . 2008,第4期

机译：自组装InAs / InP量子点的电子结构：与自组装InAs / GaAs量子点的比较
2. A TEM study of the evolution of InAs/GaAs self-assembled dots on (311)B GaAs with growth interruption [J] . D L Sales, A M Sanchez, R Beanland, Semiconductor science and technology . 2007,第2期

机译：TEM研究（311）B GaAs上具有生长中断的InAs / GaAs自组装点的演变
3. A TEM study of the evolution of InAs /GaAs self-assembled dots on (311)B GaAs with growth interruption [J] . D L Sales, A M Sanchez, R Beanland, Semiconductor science and technology . 2007,第2期

机译：透射电子显微镜研究（311）B GaAs上InAs / GaAs自组装点的生长中断过程
4. TEM study of InAs self-assembled quantum dots in GaAs [C] . E. Muller, E. Ribeiro, T. Heinzel, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：在GaAs中自组装量子点INAS的TEM研究
5. Self-Assembled InAs/GaAs/ Quantum Dot Solar Cells. [D] . Li, Tian. 2015

机译：自组装的InAs / GaAs /量子点太阳能电池。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较

TEM study of InAs self-assembled quantum dots in GaAs

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