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首页> 外文学位 >Design and fabrication of novel indium gallium arsenide and aluminum gallium indium phosphorus quantum well lasers by metalorganic chemical vapor deposition.
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Design and fabrication of novel indium gallium arsenide and aluminum gallium indium phosphorus quantum well lasers by metalorganic chemical vapor deposition.

机译：通过金属有机化学气相沉积法设计和制造新型砷化铟镓和铝镓铟磷量子阱激光器。

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摘要

This dissertation addresses these projects with a common focus-improving the performance of strain layer laser structures.; Techniques for fabricating a self-defined AlAs oxide-current-aperture that is applicable to very small width devices and small aperture vertical-cavity surface-emitting lasers (VCSELs) are presented. InGaAs single quantum well buried heterostructure (BH) diode edge emitting lasers with a self-defined AlAs oxide-current-aperture were fabricated by a three step MOCVD growth to demonstrate the validity of the process.; A three step grown self-defined AlAs oxide-current-aperture BH VCSEL has been fabricated. This BH structure can solve the current spreading and carrier diffusion problems, which are the most serious factors of increasing the threshold current in a small size aperture planar VCSEL structure. The approach also improves the instability of very small size apertures during processing and run-to-run reproducibility of the oxidation.; We demonstrate here a 1.2μm laser emission from a GaAsP/InGaAs strain compensated single quantum well laser which enables the fabrication of vertical cavity surface emitting lasers for optical interconnection through Si wafers. Strain compensation and low temperature growth were used to extend the wavelength of emission to the longest yet achieved on GaAs in this materials system.; A 630 nm band VCSEL device structure that utilizes hybrid oxide/semiconductor DBR has been proposed.; To develop the materials necessary for fabricating the proposed devices, the properties of appropriate materials and device structures were investigated. GaInP tensile strained single quantum well (TSQW) diode lasers were fabricated. The broad area laser has a minimum threshold current density of 772A/cm 2. The AlOx current aperture GaInP TSQW lasers have been fabricated to test the properties of these materials in oxide confined devices. The lowest threshold current is 12mA at the aperture size of 4μm with the wavelength of 637nm. We have also fabricated compressive strained GaInP MQW broad area lasers. The minimum threshold density of the laser is 898A/cm 2. The AlOx current aperture GaInP MQW were fabricated from this material. The lowest threshold current is 44mA at the aperture size of 0.5μm with the wavelength of 635nm.
机译：本文着眼于这些项目，着重于提高应变层激光结构的性能。提出了制造自定义AlAs氧化物电流孔径的技术，该技术可用于非常小宽度的器件和小孔径垂直腔面发射激光器（VCSEL）。通过三步MOCVD生长制备了具有自定义AlAs氧化物电流孔径的InGaAs单量子阱掩埋异质结构（BH）二极管边缘发射激光器，以证明该方法的有效性。制备了三步生长的自定义AlAs氧化物电流孔径BH VCSEL。这种BH结构可以解决电流扩展和载流子扩散问题，这是在小尺寸孔径平面VCSEL结构中增加阈值电流的最严重因素。该方法还改善了在加工过程中非常小的孔径的不稳定性以及氧化的逐次重复性。我们在这里展示了来自GaAsP / InGaAs应变补偿的单量子阱激光器的1.2μm激光发射，该激光器能够制造用于通过Si晶片进行光学互连的垂直腔表面发射激光器。应变补偿和低温生长被用来将发射波长扩展到该材料系统中GaAs所能达到的最长波长。已经提出了利用混合氧化物/半导体DBR的630nm波段的VCSEL器件结构。为了开发制造所提出的装置所必需的材料，研究了适当材料和装置结构的特性。制备了GaInP拉伸应变单量子阱（TSQW）二极管激光器。广域激光器的最小阈值电流密度为772A / cm 2 。制备了AlO x 电流孔径GaInP TSQW激光器，以测试这些材料在氧化物约束器件中的性能。在孔径为4μm，波长为637nm的情况下，最低阈值电流为12mA。我们还制造了压缩应变GaInP MQW广域激光器。激光的最小阈值密度为898A / cm 2 。 AlO x 电流孔径GaInP MQW是用这种材料制成的。在孔径为0.5μm，波长为635nm的情况下，最低阈值电流为44mA。

著录项

  • 作者

    Choi, Won-Jin.;

  • 作者单位

    University of Southern California.;

  • 授予单位 University of Southern California.;
  • 学科 Engineering Electronics and Electrical.; Physics Optics.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 120 p.
  • 总页数 120
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;
  • 关键词

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