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首页> 外文期刊>Advanced Functional Materials >A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices
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A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices

机译：GeTe / Sb2Te3硫族化物超晶格中非零贝里相引起的磁阻

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摘要

The chalcogenide alloy Ge-Sb-Te (GST) has not only been used in rewritable digital versatile discs, but also in nonvolatile electrical phase change memory as a key recording material. Although GST has been believed for a long time not to show magnetic properties unless doped with magnetic impurities, it has recently been reported that superlattices (SLs) with the structure [(GeTe)(L)(Sb2Te3)(M)](N) (where L, M, and N are usually integers) have a large magnetoresistance at room temperature for particular combinations of L and M. Here it is reported that when [(GeTe)(L)(Sb2Te3)(M)](N) chalcogenide SL films are thermally annealed at 470 K and cooled down to room temperature under an external magnetic field accompanied by current pulse injections, a large magnetoresistance change (> 2500 Omega) is induced. This study shows that the phenomenon has a strong correlation with the GeTe thickness and the periodic structure of the SL films, and that it is induced by the structural phase transition between electrically nonpolar and polar phases in the GeTe layers in the SLs. This study proposes that the relationship between the polar (ferroelectric) phase and the Berry curvature in the SLs is responsible for the magnetoresistance change.
机译：硫族化物合金Ge-Sb-Te（GST）不仅用于可擦写的数字多功能光盘，而且还用作主要的记录材料在非易失性电相变存储器中。尽管人们长期以来一直认为GST除非掺杂了磁性杂质，否则不会显示出磁性，但最近有报道称，具有[[GeTe]（L）（Sb2Te3）（M）]（N）结构的超晶格（SLs） （其中L，M和N通常是整数）对于L和M的特定组合在室温下具有较大的磁阻。据报道，当[[GeTe）（L）（Sb2Te3）（M）]（N）时硫属化物SL膜在470 K的温度下进行热退火，并在伴随电流脉冲注入的外部磁场下冷却至室温，从而引起较大的磁阻变化（> 2500Ω）。这项研究表明，该现象与GeTe厚度和SL膜的周期性结构密切相关，并且是由SLs的GeTe层中非极性相和极性相之间的结构相变引起的。这项研究提出，SLs中的极性（铁电）相和贝里曲率之间的关系是导致磁阻变化的原因。

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  • 来源
    《Advanced Functional Materials》 |2017年第40期|1702243.1-1702243.9|共9页
  • 作者

    Tominaga Junji; Saito Yuta; Mitrofanov Kirill; Inoue Nobuki; Fons Paul; Kolobov Alexander V.; Nakamura Hisao; Miyata Noriyuki;

  • 作者单位

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr Computat Design Adv Funct Mat, Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr Computat Design Adv Funct Mat, Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba Cent 5,1-1-1 Higashi, Tsukuba, Ibaraki 3058565, Japan;

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  • 正文语种 eng
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  • 关键词

    anomalous Hall effect; Berry phase; chalcogenide superlattice; magnetoresistance; phase change memory;

    机译：霍尔效应;浆果相;硫族化物超晶格;磁阻;相变记忆;

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