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Fast Photoresponse from 1T Tin Diselenide Atomic Layers

机译：1T锡二硒化物原子层的快速光响应

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摘要

Atomically layered 2D crystals such as transitional metal dichalcogenides (TMDs) provide an enchanting landscape for optoelectronic applications due to their unique atomic structures. They have been most intensively studied with 2H phase for easy fabrication and manipulation. 1T phase material could possess better electrocatalytic and photocatalytic properties, while they are difficult to fabricate. Herein, for the first time, the atomically layered 1T phase tin diselenides (SnSe2, III-IV compound) are successfully exfoliated by the method of mechanical exfoliation from bulk single crystals, grown via the chemical vapor transport method without transport gas. More attractively, the high performance atomically layered SnSe2 photodetector has been first successfully fabricated, which displays a good responsivity of 0.5 A W-1 and a fast photoresponse down to approximate to 2 ms at room temperature, one of the fastest response times among all types of 2D photodetectors. It makes SnSe2 a promising candidate for high performance optoelectronic devices. Moreover, high performance bilayered SnSe2 field-effect transistors are also demonstrated with a mobility of approximate to 4 cm(2) V-1 s(-1) and an on/off ratio of 10(3) at room temperature. The results demonstrate that few layered 1T TMD materials are relatively stable in air and can be exploited for various electrical and optical applications.
机译：原子层状的2D晶体（例如过渡金属二卤化物（TMD））因其独特的原子结构而为光电应用提供了迷人的风景。为了易于制造和操作，对2H相进行了最深入的研究。 1T相材料可能具有更好的电催化和光催化性能，但难以制造。在此，通过机械剥离法，通过化学气相传输法在没有输送气体的情况下生长，通过机械剥离法成功地将原子层状的1T相二硒化锡（SnSe2，III-IV化合物）剥离。更具吸引力的是，高性能原子分层SnSe2光电探测器已首次成功制造，其在室温下显示出0.5 A W-1的良好响应度，并在接近2 ms的时间内具有快速的光响应，是所有类型中最快的响应时间之一2D光电探测器。它使SnSe2成为高性能光电器件的有希望的候选者。此外，还证明了高性能双层SnSe2场效应晶体管在室温下的迁移率约为4 cm（2）V-1 s（-1），开/关比为10（3）。结果表明，几乎没有分层的1T TMD材料在空气中相对稳定，可用于各种电气和光学应用。

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  • 来源
    《Advanced Functional Materials》 |2016年第1期|137-145|共9页
  • 作者

    Yu Peng; Yu Xuechao; Lu Wanglin; Lin Hsin; Sun Linfeng; Du Kezhao; Liu Fucai; Fu Wei; Zeng Qingsheng; Shen Zexiang; Jin Chuanhong; Wang Qi Jie; Liu Zheng;

  • 作者单位

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore;

    Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

    Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore;

    Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

    Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

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