Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

M. Mehran; S. Mohajerzadeh; Z. Sanaee; Y. Abdi

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Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

机译：使用改进的深反应离子刻蚀在硅上形成纳米草和纳米结构

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Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

机译：硅纳米草和纳米结构是使用改良的深反应离子刻蚀技术在硅衬底的平面和垂直表面上实现的。蚀刻工艺基于顺序的钝化和蚀刻周期，可以对其进行调整以实现无草的高长宽比特征以及满草的表面。将纳米结构并入到叉指电容式加速度计的垂直放置的平行指上会使总电容从0.45增加到30 pF。已经实现了特征低于100 nm的垂直结构。

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来源
《Applied Physicsletters》 |2010年第20期|P.203101.1-203101.3|共3页
作者
M. Mehran; S. Mohajerzadeh; Z. Sanaee; Y. Abdi;
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作者单位

Nano-Electronic and Thin Film Lab, Nano-Electronic Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 14395, Iran;

rnNano-Electronic and Thin Film Lab, Nano-Electronic Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 14395, Iran;

rnNano-Electronic and Thin Film Lab, Nano-Electronic Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 14395, Iran;

rnNano-Electronic and Thin Film Lab, Nano-Electronic Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 14395, Iran;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching [J] . M. Mehran S. Mohajerzadeh Z. Sanaee and Y. Abdi Applied Physics Letteres . 2010,第20期

机译：使用改进的深反应离子刻蚀在硅上形成纳米草和纳米结构
2. Formation of silicon nanograss and microstructures on silicon using deep reactive ion etching [J] . Mehran M.Sanaee Z.Mohajerzadeh S. Micro & Nano Letters, IET . 2010,第6期

机译：使用深度反应离子刻蚀在硅上形成纳米硅草和微结构
3. Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures [J] . F. Marty, L. Rousseau, B. Saadany, Microelectronics journal . 2005,第7期

机译：基于深反应离子刻蚀的硅高级刻蚀，用于硅高纵横比微结构和三维微纳结构
4. Design and implementation of silicon-based optical nanostructures for integrated photonic circuit applications using Deep Reactive Ion Etching (DRIE) technique [C] . S. Selvarasah, R. Banyal, BDF. Casse, NSTI BioNano Conference and Trade Show . 2008

机译：基于硅基光学纳米结构的设计与实现，用于使用深反应离子蚀刻（DRIE）技术的集成光子电路应用
5. Development of a deep silicon phase Fresnel lens using gray-scale lithography and deep reactive ion etching [D] . Morgan, Brian C. 2004

机译：使用灰度光刻和深反应离子刻蚀开发深硅相菲涅耳透镜
6. Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching [O] . Daniel CS Bien, Hing Wah Lee, Siti Aishah Mohamad Badaruddin 2012

机译：结合隔离技术和深反应离子刻蚀形成硅纳米结构
7. Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching [O] . Daniel CS Bien, Hing Lee, Siti Aishah Badaruddin 2012

机译：结合隔离技术和深反应离子刻蚀形成硅纳米结构

Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

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