Chemical structures and electrical properties of atomic layer deposited HfO_2 thin films grown at an extremely low temperature (≤100 ℃) using O_3 as an oxygen source

著录项

• 来源
  《Applied Surface Science》 |2014年第15期|852-856|共5页
• 作者

  Jeong Hwan Kim; Tae Joo Park; Seong Keun Kim; Deok-Yong Cho; Hyung-Suk Jung; Sang Young Lee; Cheol Seong Hwang;

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• 作者单位

  WCU Hybrid Materials Program, Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 157-742, Korea,Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials, Daejeon 305-343, Korea;

  Department of Materials Science & Engineering, Hanyang University, Ansan 426-791, Korea;

  Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea;

  Center for Correlated Electron Systems, Institute for Basic Science, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea;

  WCU Hybrid Materials Program, Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 157-742, Korea;

  WCU Hybrid Materials Program, Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 157-742, Korea;

  WCU Hybrid Materials Program, Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 157-742, Korea;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Atomic layer deposition; HfO_2; Ozone concentration; Low temperature process;

  机译：原子层沉积;HfO_2;臭氧浓度低温工艺;