Accurate detection of interface between SiO_2 film and Si substrate

H.X. Qian; W. Zhou; X.M. Li; J.M. Miao; L.E.N. Lim

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Accurate detection of interface between SiO_2 film and Si substrate

机译：准确检测SiO_2膜与Si衬底之间的界面

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Accurate end point detection of interface for multilayers using focused ion beam (FIB) is important in nanofabrication and IC modification. Real-time end point graph shows sample absorbed current as a function of sputtering time during FIB milling process. It is found that sample absorbed current increases linearly with ion beam current for the same material and changes when ion beam is milling through a different material. Investigation by atomic force microscope (AFM) and FIB cross-sectioning shows that accurate SiO_2/Si interface occurs to where the maximum sample absorbed current occurs. Since sample absorbed current can be real-time monitored in focused ion beam machine, the paper provides a viable and simple method for accurately determining the interface during FIB milling process for widely used SiO_2/Si system.

机译：使用聚焦离子束（FIB）的多层界面的准确终点检测在纳米制造和IC改性中很重要。实时终点图显示了FIB研磨过程中样品吸收电流与溅射时间的关系。发现对于相同的材料，样品吸收的电流随离子束电流线性增加，而当离子束通过另一种材料铣削时，吸收电流会发生变化。通过原子力显微镜（AFM）和FIB横截面进行的研究表明，在出现最大样品吸收电流的位置，会出现准确的SiO_2 / Si界面。由于可以在聚焦离子束机中实时监测样品吸收的电流，因此本文为广泛使用的SiO_2 / Si系统在FIB铣削过程中准确确定界面提供了一种可行且简单的方法。

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来源
《Applied Surface Science》 |2007年第12期|5511-5515|共5页
作者
H.X. Qian; W. Zhou; X.M. Li; J.M. Miao; L.E.N. Lim;
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作者单位

Precision Engineering and Nanotechnology Centre, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
focused ion beam; end point; sample absorbed current; interface;

机译：聚焦离子束终点样品吸收电流;接口;

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Accurate detection of interface between SiO_2 film and Si substrate

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